UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 38

Sortiert nach

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Journal of applied physics, 2021-03, Vol.129 (12)

2021

Volltextzugriff (PDF)

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2793-2801

2014

Volltextzugriff (PDF)

Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2666-2669

2018

Volltextzugriff (PDF)

Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers

Applied surface science, 2019-03, Vol.471, p.686-693

2019

Volltextzugriff (PDF)

Mg Doping of N-Polar, In-Rich InAlN

Materials, 2023-03, Vol.16 (6), p.2250

2023

Volltextzugriff (PDF)

Vertical GaN Transistor with Semi‐Insulating Channel

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

Volltextzugriff (PDF)

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

Volltextzugriff (PDF)

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Materials, 2021-06, Vol.14 (13), p.3461

2021

Volltextzugriff (PDF)

Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

Physica status solidi. A, Applications and materials science, 2017-11, Vol.214 (11), p.n/a

2017

Volltextzugriff (PDF)

Optimization of UV-assisted wet oxidation of GaAs

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-01, Vol.35 (1)

2017

Volltextzugriff (PDF)

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

IEEE electron device letters, 2013-03, Vol.34 (3), p.432-434

2013

Volltextzugriff (PDF)

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

ACS applied electronic materials, 2024-07

2024

Volltextzugriff (PDF)

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

IEEE photonics technology letters, 2011-09, Vol.23 (17), p.1189-1191

2011

Volltextzugriff (PDF)

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD21

2019

Volltextzugriff (PDF)

Resistive switching in nonplanar HfO2-based structures with variable series resistance

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-01, Vol.33 (1)

2015

Volltextzugriff (PDF)

ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Jpn J Appl Phys, 2013-08, Vol.52 (8), p.08JN07-08JN07-4

2013

Volltextzugriff (PDF)

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

Microelectronic engineering, 2013-12, Vol.112, p.204-207

2013

Volltextzugriff (PDF)

New approach to local anodic oxidation of semiconductor heterostructures

Ultramicroscopy, 2008-09, Vol.108 (10), p.1086-1089

2008

Volltextzugriff (PDF)

Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices

Ultramicroscopy, 2008-09, Vol.108 (10), p.1021-1024

2008

Volltextzugriff (PDF)

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.046504-046504-3

2010

Volltextzugriff (PDF)

GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs

Journal of micromechanics and microengineering, 2010-09, Vol.20 (9), p.097001-097001

2010

Volltextzugriff (PDF)

Switching Magnetization Magnetic Force Microscopy — An Alternative to Conventional Lift-Mode MFM

Journal of Electrical Engineering, 2011-01, Vol.62 (1), p.37-43

2011

Volltextzugriff (PDF)

Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing

Physica status solidi. C, 2010-01, Vol.7 (1), p.108-111

2010

Volltextzugriff (PDF)

Novel Hall sensors developed for magnetic field imaging systems

Journal of magnetism and magnetic materials, 2007-09, Vol.316 (2), p.232-235

2007

Volltextzugriff (PDF)

ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8S), p.08JN07-08JN07

2013

Volltextzugriff (PDF)

1 – 25 von 38

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(32)
Mit Volltextzugriff
(35)

Publikationsform

Artikel
(33)
Tagungsberichte
(5)

Sprache

Englisch
(38)
Japanisch
(9)

Erscheinungsjahr

n.n

Thema

Science & Technology
(27)
Physics
(24)
Technology
(23)
Physical Sciences
(21)
Physics, Applied
(20)
Engineering
(13)
Engineering, Electrical & Electronic
(13)
Materials Science
(10)
Gallium Nitrides
(9)
Transistors
(9)
Logic Gates
(8)
Materials Science, Multidisciplinary
(8)
Semiconductor Devices
(8)
High Electron Mobility Transistors
(7)
Nanoscience & Nanotechnology
(7)
Physics, Condensed Matter
(7)
Science & Technology - Other Topics
(7)
Exact Sciences And Technology
(6)
Applied Sciences
(5)
Electronics
(5)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers

Mg Doping of N-Polar, In-Rich InAlN

Vertical GaN Transistor with Semi‐Insulating Channel

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Polarization‐Engineered n+GaN/InGaN/AlGaN/GaN Normally‐Off MOS HEMTs

Optimization of UV-assisted wet oxidation of GaAs

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region

Resistive switching in nonplanar HfO2-based structures with variable series resistance

ZrO2/InAlN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Ni/Au–Al2O3 gate stack prepared by low-temperature ALD and lift-off for MOS HEMTs

New approach to local anodic oxidation of semiconductor heterostructures

Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field Effect Transistors

GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs

Switching Magnetization Magnetic Force Microscopy — An Alternative to Conventional Lift-Mode MFM

Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing

Novel Hall sensors developed for magnetic field imaging systems

ZrO sub(2)/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Suchergebnisse filtern