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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Applied surface science, 2004-03, Vol.224 (1), p.336-340

2004

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Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.314-318

2002

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In situ growth of evaporated TiO2 thin films using oxygen radicals: Effect of deposition temperature

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1998-07, Vol.16 (4), p.2495-2500

1998

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Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

Journal of applied physics, 1998-08, Vol.84 (3), p.1632-1642

1998

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Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Journal of applied physics, 2000-08, Vol.88 (3), p.1655-1663

2000

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Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

IEEE transactions on semiconductor manufacturing, 2000-05, Vol.13 (2), p.119-126

2000

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A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1767-1769

2000

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Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors

Microelectronics and reliability, 2001-06, Vol.41 (6), p.881-886

2001

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Characterization of In Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

Journal of the Electrochemical Society, 1997-11, Vol.144 (11), p.3952-3958

1997

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On DC modeling of the base resistance in bipolar transistors

Solid-state electronics, 2000, Vol.44 (8), p.1411-1418

2000

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The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors

Solid-state electronics, 1999-03, Vol.43 (3), p.615-620

1999

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Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.268-275

2008

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A simplified high-speed bipolar process with Ti salicide metallization: implementation of in situ p-doped polysilicon emitter

Physica scripta, 1999-01, Vol.1999 (1), p.318

1999

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The influence on electrical performance of double-polysilicon bipolar transistors by forming gas annealing

Physica scripta, 1999-01, Vol.1999 (1), p.243

1999

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The effect of emitter overetch and base implantation tilt on the performance of double polysilicon bipolar transistors

Physica scripta, 1999-01, Vol.1999 (1), p.246

1999

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Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

Microelectronics and reliability, 2000-11, Vol.40 (11), p.1863-1867

2000

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A Base-Collector Architecture for SiGe HBTs using Low-Temperature CVD Epitaxy Combined with Chemical-Mechanical Polishing

Physica scripta, 2002-01, Vol.2002 (1), p.64

2002

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Implanted collector profile optimization in a SiGe HBT process

Solid-state electronics, 2001-03, Vol.45 (3), p.399-404

2001

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A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

Solid-state electronics, 2000-03, Vol.44 (3), p.549

2000

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A base-collector architecture for SiGeHBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing

Physica scripta, 2002, Vol.T101, p.64

2002

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Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine

Journal of applied physics, 1999-08, Vol.86 (4), p.1970-1973

1999

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Novel Devices for (Sub)millimeter-Wave Space Applications

IEICE transactions on electronics, 2006-07, Vol.E89-C (7), p.891-897

GRAHN, J. V.

2006

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Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics

Solid-state electronics, 2000, Vol.44 (10), p.1747

2000

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A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

Solid-state electronics, 2000-03, Vol.44 (3), p.549-554

2000

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Implanted collector profile optimization in a SiGeHBT process

Solid-state electronics, 2001, Vol.45 (3), p.399

2001

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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition

In situ growth of evaporated TiO2 thin films using oxygen radicals: Effect of deposition temperature

Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors

Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors

Characterization of In Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

On DC modeling of the base resistance in bipolar transistors

The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors

Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications

A simplified high-speed bipolar process with Ti salicide metallization: implementation of in situ p-doped polysilicon emitter

The influence on electrical performance of double-polysilicon bipolar transistors by forming gas annealing

The effect of emitter overetch and base implantation tilt on the performance of double polysilicon bipolar transistors

Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

A Base-Collector Architecture for SiGe HBTs using Low-Temperature CVD Epitaxy Combined with Chemical-Mechanical Polishing

Implanted collector profile optimization in a SiGe HBT process

A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

A base-collector architecture for SiGeHBTs using low-temperature CVD epitaxy combined with chemical-mechanical polishing

Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine

Novel Devices for (Sub)millimeter-Wave Space Applications

Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics

A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

Implanted collector profile optimization in a SiGeHBT process

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