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Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors-Part II: Analysis of Device Properties

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3927-3933

2017

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Wafer-Scale Statistical Analysis of Graphene FETs-Part I: Wafer-Scale Fabrication and Yield Analysis

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3919-3926

2017

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Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field

Applied physics letters, 2014-03, Vol.104 (9), p.92405

2014

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3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

Advanced functional materials, 2012-10, Vol.22 (19), p.4004-4008

2012

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Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Germanium on Insulator Fabrication for Monolithic 3-D Integration

IEEE journal of the Electron Devices Society, 2018-01, Vol.6 (1), p.588-593

2018

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Low-frequency noise in high-k LaLuO3/TiN MOSFETs

Solid-state electronics, 2012-12, Vol.78, p.51-55

2012

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Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs

Materials science forum, 2020-07, Vol.1004, p.642-651

2020

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Ultrafast Metal-Free Microsupercapacitor Arrays Directly Store Instantaneous High-Voltage Electricity from Mechanical Energy Harvesters

Advanced science, 2024-03, p.e2400697-e2400697

2024

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Bipolar integrated circuits in SiC for extreme environment operation

Semiconductor science and technology, 2017, Vol.32 (3), p.34002

2017

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Editorial Selected papers from the 15th Ultimate Integration on Silicon (ULIS) conference

Solid-state electronics, 2015-06, Vol.108, p.1-1

2015

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Order of magnitude improvement of nano-contact spin torque nano-oscillator performance

Nanoscale, 2017-02, Vol.9 (5), p.1896-19

2017

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Order of magnitude improvement of nano-contact spin torque nano-oscillator performance

Nanoscale, , Vol.9 (5), p.1896-1900

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Impact of intragrain spin wave reflections on nanocontact spin torque oscillators

Physical review. B, 2021-06, Vol.103 (21), Article 214433

2021

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Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model-Part I: Analytical Model of the MTJ STO

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.1037-1044

2015

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Integration of GMR-based spin torque oscillators and CMOS circuitry

Solid-state electronics, 2015-09, Vol.111, p.91-99

2015

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Ge-profile design for improved linearity of SiGe double HBTs

IEEE electron device letters, 2002-01, Vol.23 (1), p.19-21

2002

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ALD high-k layer grating couplers for single and double slot on-chip SOI photonics

Solid-state electronics, 2012-08, Vol.74, p.58-63

2012

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Spin-Torque and Spin-Hall Nano-Oscillators

Proceedings of the IEEE, 2016-10, Vol.104 (10), p.1919-1945

2016

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High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators

IEEE electron device letters, 2019-05, Vol.40 (5), p.670-673

2019

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Impact of Random Grain Structure on Spin-Hall Nano-Oscillator Modal Stability

IEEE electron device letters, 2022-02, Vol.43 (2), p.312-315

2022

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Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1076-1083

2012

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Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors

Microelectronics and reliability, 2001-06, Vol.41 (6), p.881-886

2001

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A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology

IEEE electron device letters, 2018-06, Vol.39 (6), p.855-858

2018

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1/f Noise and Dark Current Correlation in Midwave InAs/GaSb Type‐II Superlattice IR Detectors

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (3), p.2000557-n/a

2021

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Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors-Part II: Analysis of Device Properties

Wafer-Scale Statistical Analysis of Graphene FETs-Part I: Wafer-Scale Fabrication and Yield Analysis

Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field

3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching

Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

Germanium on Insulator Fabrication for Monolithic 3-D Integration

Low-frequency noise in high-k LaLuO3/TiN MOSFETs

Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs

Ultrafast Metal-Free Microsupercapacitor Arrays Directly Store Instantaneous High-Voltage Electricity from Mechanical Energy Harvesters

Bipolar integrated circuits in SiC for extreme environment operation

Editorial Selected papers from the 15th Ultimate Integration on Silicon (ULIS) conference

Order of magnitude improvement of nano-contact spin torque nano-oscillator performance

Order of magnitude improvement of nano-contact spin torque nano-oscillator performance

Impact of intragrain spin wave reflections on nanocontact spin torque oscillators

Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model-Part I: Analytical Model of the MTJ STO

Integration of GMR-based spin torque oscillators and CMOS circuitry

Ge-profile design for improved linearity of SiGe double HBTs

ALD high-k layer grating couplers for single and double slot on-chip SOI photonics

Spin-Torque and Spin-Hall Nano-Oscillators

High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators

Impact of Random Grain Structure on Spin-Hall Nano-Oscillator Modal Stability

Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors

A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology

1/f Noise and Dark Current Correlation in Midwave InAs/GaSb Type‐II Superlattice IR Detectors

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