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Single Event Transients in Digital CMOS-A Review

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1767-1790

2013

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IEEE_Xplore

Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3483-3488

2009

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IEEE_Xplore

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3115-3121

2009

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IEEE_Xplore

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3477-3482

2009

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IEEE_Xplore

Improvement of SOI MOSFET RF Performance by Implant Optimization

IEEE microwave and wireless components letters, 2010-05, Vol.20 (5), p.271-273

2010

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IEEE_Xplore

2010 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3005-3005

2010

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IEEE_Xplore

Three-dimensional integration of silicon-on-insulator RF amplifier

Electronics letters, 2008, Vol.44 (12), p.746-747

2008

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Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1113-1117

2011

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Generation and Propagation of Single Event Transients in 0.18- \mu Fully Depleted SOI

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2854-2860

2008

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IEEE_Xplore

The role of nanoclusters in reducing hole trapping in ion implanted oxides

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1947-1953

2003

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IEEE_Xplore

Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1776-1783

2003

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IEEE_Xplore

3D-enabled heterogeneous integrated circuits

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013, p.1-29

2013

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IEEE_Xplore

Asymmetric SEU in SOI SRAMs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2481-2486

2005

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IEEE_Xplore

Fabrication of self-aligned 90-nm fully depleted SOI CMOS SLOTFETs

IEEE electron device letters, 2001-07, Vol.22 (7), p.345-347

2001

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IEEE_Xplore

Hardness Assurance Testing for Proton Direct Ionization Effects

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1197-1202

2012

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IEEE_Xplore

SET Characterization in Logic Circuits Fabricated in a 3DIC Technology

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2555-2562

2011

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IEEE_Xplore

Radiation Effects in 3D Integrated SOI SRAM Circuits

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2845-2854

2011

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IEEE_Xplore

Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2968-2975

2011

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IEEE_Xplore

Electron and hole trapping in thermal oxides that have been ion implanted

Microelectronic engineering, 2001-11, Vol.59 (1), p.285-289

2001

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Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.820-826

2011

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IEEE_Xplore

Comparison of charge trapping in undoped oxides made by low- and high-temperature deposition techniques

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2107-2113

2001

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IEEE_Xplore

Anomalous drain voltage dependence in bias temperature instability measurements on high-[kappa] field effect transistors

Microelectronics and reliability, 2011-06, Vol.51 (6), p.1113-1117

2011

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Generation and Propagation of Single Event Transients in 0.18-[Formula Omitted] Fully Depleted SOI

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2854

2008

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Channel engineering of SOI MOSFETs for RF applications

2009 IEEE International SOI Conference, 2009, p.1-2

2009

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IEEE_Xplore

Three-dimensional integration of silicon-on-insulator RF amplifier

Electronics letters, 2008-06, Vol.44 (12), p.1-1

2008

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Single Event Transients in Digital CMOS-A Review

Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

Improvement of SOI MOSFET RF Performance by Implant Optimization

2010 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

Three-dimensional integration of silicon-on-insulator RF amplifier

Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors

Generation and Propagation of Single Event Transients in 0.18- \mu Fully Depleted SOI

The role of nanoclusters in reducing hole trapping in ion implanted oxides

Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET

3D-enabled heterogeneous integrated circuits

Asymmetric SEU in SOI SRAMs

Fabrication of self-aligned 90-nm fully depleted SOI CMOS SLOTFETs

Hardness Assurance Testing for Proton Direct Ionization Effects

SET Characterization in Logic Circuits Fabricated in a 3DIC Technology

Radiation Effects in 3D Integrated SOI SRAM Circuits

Comparison of Single and Two-Photon Absorption for Laser Characterization of Single-Event Upsets in SOI SRAMs

Electron and hole trapping in thermal oxides that have been ion implanted

Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

Comparison of charge trapping in undoped oxides made by low- and high-temperature deposition techniques

Anomalous drain voltage dependence in bias temperature instability measurements on high-[kappa] field effect transistors

Generation and Propagation of Single Event Transients in 0.18-[Formula Omitted] Fully Depleted SOI

Channel engineering of SOI MOSFETs for RF applications

Three-dimensional integration of silicon-on-insulator RF amplifier

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