UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Incomplete ionization in aluminum-doped 4H-silicon carbide

Journal of applied physics, 2019-10, Vol.126 (14)

2019

Volltextzugriff (PDF)

The intrinsic atomic-level surface roughness mobility limit of 4H-SiC

Journal of applied physics, 2018-09, Vol.124 (10)

2018

Volltextzugriff (PDF)

Effects of Fermi pinning and quantum mechanisms on leakage current of 4H-SiC Schottky diodes

Journal of applied physics, 2022-01, Vol.131 (3)

2022

Volltextzugriff (PDF)

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3258-3264

2012

Volltextzugriff (PDF)

Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes

Physical review. B, Condensed matter, 2003-07, Vol.68 (4), Article 045426

2003

Volltextzugriff (PDF)

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Journal of applied physics, 2022-12, Vol.132 (22)

2022

Volltextzugriff (PDF)

Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy

Journal of applied physics, 2019-04, Vol.125 (13)

2019

Volltextzugriff (PDF)

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1835-1840

2008

Volltextzugriff (PDF)

Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

IEEE transactions on nuclear science, 2018-06, Vol.65 (6), p.1248-1254

2018

Volltextzugriff (PDF)

Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1828-1832

2019

Volltextzugriff (PDF)

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2015-07, Vol.118 (4)

2015

Volltextzugriff (PDF)

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2014-03, Vol.115 (10)

2014

Volltextzugriff (PDF)

Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces

Journal of applied physics, 2014-11, Vol.116 (17)

2014

Volltextzugriff (PDF)

Low-field semiclassical carrier transport in semiconducting carbon nanotubes

Physical review. B, Condensed matter and materials physics, 2005-05, Vol.71 (20), p.205318.1-205318.12, Article 205318

2005

Volltextzugriff (PDF)

The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface

Journal of applied physics, 2013-02, Vol.113 (5)

2013

Volltextzugriff (PDF)

Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2984-2990

2007

Volltextzugriff (PDF)

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1334-1342

2010

Volltextzugriff (PDF)

Electron Transport and Velocity Oscillations in a Carbon Nanotube

IEEE transactions on nanotechnology, 2007-07, Vol.6 (4), p.469-474

2007

Volltextzugriff (PDF)

Self-consistent calculations for n -type hexagonal SiC inversion layers

Journal of applied physics, 2004-04, Vol.95 (8), p.4223-4234

2004

Volltextzugriff (PDF)

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Materials science forum, 2009-01, Vol.600-603, p.807-810

2009

Volltextzugriff (PDF)

Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2061-2070

2008

Volltextzugriff (PDF)

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

Applied physics letters, 2007-02, Vol.90 (6), p.062110-062110-3

2007

Volltextzugriff (PDF)

Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2395-2403

2005

Volltextzugriff (PDF)

RF energy scavenging system utilising switched capacitor DC-DC converter

Electronics letters, 2009, Vol.45 (7), p.374-376

2009

Volltextzugriff (PDF)

Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.577-584

2005

Volltextzugriff (PDF)

1 – 25 von 243

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(100)
Mit Volltextzugriff
(231)

Publikationsform

Sprache

Englisch
(242)

Erscheinungsjahr

n.n

Thema

Science & Technology
(160)
Technology
(137)
Engineering
(115)
Engineering, Electrical & Electronic
(106)
Physical Sciences
(98)
Physics
(85)
Physics, Applied
(74)
Silicon Carbide
(45)
Educational Institutions
(42)
Mosfets
(35)
Exact Sciences And Technology
(34)
Physics, Condensed Matter
(32)
Applied Sciences
(28)
Computer Science
(25)
Electronics
(25)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(23)
Electrons
(21)
Materials Science
(20)
Monte Carlo Methods
(19)
Materials Science, Multidisciplinary
(17)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Incomplete ionization in aluminum-doped 4H-silicon carbide

The intrinsic atomic-level surface roughness mobility limit of 4H-SiC

Effects of Fermi pinning and quantum mechanisms on leakage current of 4H-SiC Schottky diodes

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes

Comparison of contact metals evaporated onto monolayer molybdenum disulfide

Effects of volumetric and potential energy change on indirect to direct bandgap transition of Ge/Sn alloy

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes

Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power Devices

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors

Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces

Low-field semiclassical carrier transport in semiconducting carbon nanotubes

The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface

Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

Electron Transport and Velocity Oscillations in a Carbon Nanotube

Self-consistent calculations for n -type hexagonal SiC inversion layers

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits

RF energy scavenging system utilising switched capacitor DC-DC converter

Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs

Suchergebnisse filtern