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Electrical and optical properties of graphite/ZnO nanorods heterojunctions

Carbon (New York), 2014-10, Vol.77, p.1011-1019

2014

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Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma

Physica status solidi. A, Applications and materials science, 2007-04, Vol.204 (4), p.1030-1033

Gladkov, P.

2007

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Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Applied physics letters, 2012-01, Vol.100 (3), p.031908-031908-3

2012

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Applied surface science, 2014-07, Vol.306, p.89-93

2014

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Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Journal of crystal growth, 2014-06, Vol.396, p.54-60

2014

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Morphology and origin of V-defects in semipolar (11–22) InGaN

Journal of crystal growth, 2012-01, Vol.339 (1), p.1-7

2012

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Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of crystal growth, 2010-04, Vol.312 (8), p.1205-1209

2010

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Investigation of Er doped zinc borate glasses by low-temperature photoluminescence

Journal of luminescence, 2017-12, Vol.192, p.1104-1109

2017

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Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents

Semiconductor science and technology, 2006-04, Vol.21 (4), p.544-549

2006

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Micropore modification in InP

Physica status solidi. A, Applications and materials science, 2008-11, Vol.205 (11), p.2577-2580

2008

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Photoluminescence of MOVPE-grown InAS and InAs1−xSbx: a systematic study

Journal of crystal growth, 2005-02, Vol.275 (1-2), p.e1109-e1113

2005

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Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles

Solid-state electronics, 2016-02, Vol.116, p.124-129

2016

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Growth and properties of AIIIBV QD structures for intermediate band solar cells

Journal of crystal growth, 2015-03, Vol.414, p.172-176

2015

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Growth and properties of A super(III)B super(V) QD structures for intermediate band solar cells

Journal of crystal growth, 2015-03, Vol.414, p.172-176

2015

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Controlled growth of porous networks in phosphide semiconductors

Journal of porous materials, 2008-02, Vol.15 (1), p.75-81

2008

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Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

Crystal research and technology (1979), 2005-04, Vol.40 (4-5), p.498-502

2005

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Ce and Yb doped InP layers grown for radiation detection

Physica status solidi. C, 2007-04, Vol.4 (4), p.1444-1447

2007

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Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)

Physica status solidi. A, Applications and materials science, 2006-01, Vol.203 (1), p.162-166

2006

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P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping

Materials science & engineering. B, Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.10-13

2001

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Detected line shape distortions in mössbauer spectra of beryllium alloys

Bulletin of the Russian Academy of Sciences. Physics, 2013-06, Vol.77 (6), p.779-783

2013

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Laser assisted electrochemical preparation of micro and nanopores in Ga^sub x^In^sub 1-x^P

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2011-11, Vol.13 (11), p.5873

2011

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Laser assisted electrochemical preparation of micro and nanopores in Ga sub(x)In sub(1-x)P

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2011-11, Vol.13 (11), p.5873-5877

2011

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Laser assisted electrochemical preparation of micro and nanopores in Ga x In1−x P

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2011-11, Vol.13 (11), p.5873-5877

2011

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Laser assisted electrochemical preparation of micro and nanopores in GaxIn1−xP

Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2011, Vol.13 (11), p.5873-5877

2011

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Evidence for photoluminescence band in p -type Al0.67Ga0.33As related to nonequilibrium DX− centers

Journal of applied physics, 1996-09, Vol.80 (5), p.3004-3010

1996

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Electrical and optical properties of graphite/ZnO nanorods heterojunctions

Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

Morphology and origin of V-defects in semipolar (11–22) InGaN

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Investigation of Er doped zinc borate glasses by low-temperature photoluminescence

Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents

Micropore modification in InP

Photoluminescence of MOVPE-grown InAS and InAs1−xSbx: a systematic study

Room temperature hydrogen sensing with the graphite/ZnO nanorod junctions decorated with Pt nanoparticles

Growth and properties of AIIIBV QD structures for intermediate band solar cells

Growth and properties of A super(III)B super(V) QD structures for intermediate band solar cells

Controlled growth of porous networks in phosphide semiconductors

Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt

Ce and Yb doped InP layers grown for radiation detection

Structural and optical characterisation of thick InN epilayers grown with a single or two step growth process on GaN(0001)

P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping

Detected line shape distortions in mössbauer spectra of beryllium alloys

Laser assisted electrochemical preparation of micro and nanopores in Ga^sub x^In^sub 1-x^P

Laser assisted electrochemical preparation of micro and nanopores in Ga sub(x)In sub(1-x)P

Laser assisted electrochemical preparation of micro and nanopores in Ga x In1−x P

Laser assisted electrochemical preparation of micro and nanopores in GaxIn1−xP

Evidence for photoluminescence band in p -type Al0.67Ga0.33As related to nonequilibrium DX− centers

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