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Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

Applied physics letters, 2016-02, Vol.108 (8)

2016

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CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness

Scientific reports, 2019-02, Vol.9 (1), p.1411-1411, Article 1411

2019

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All polymer encapsulated, highly-sensitive MoS2 phototransistors on flexible PAR substrate

Applied physics letters, 2018-07, Vol.113 (1)

2018

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Wavelength-selective enhancement of photo-responsivity in metal-gated multi-layer MoS2 phototransistors

Applied physics letters, 2017-11, Vol.111 (22)

2017

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Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption

Scientific reports, 2022-03, Vol.12 (1), p.4301-7, Article 4301

2022

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Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer

Applied physics letters, 2017-01, Vol.110 (5)

2017

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Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer

Applied physics letters, 2016-06, Vol.108 (26)

2016

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Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data

Electronics (Basel), 2021-01, Vol.10 (1), p.49

2021

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Supervised Multivariate Kernel Density Estimation for Enhanced Plasma Etching Endpoint Detection

IEEE access, 2022, Vol.10, p.25580-25590

2022

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Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors

Nanoscale research letters, 2017-11, Vol.12 (1), p.1-6, Article 599

2017

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Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes

IEEE electron device letters, 2015-11, Vol.36 (11), p.1215-1218

2015

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Effect of Al2O3 Passivation on Electrical Properties of \beta -Ga2O3 Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.512-516

2019

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Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

Communications materials, 2020-11, Vol.1 (1), Article 86

2020

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Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study

Journal of the Korean Physical Society, 2020, 77(4), , pp.317-322

2020

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Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors

Nanomaterials (Basel, Switzerland), 2021-02, Vol.11 (2), p.494

2021

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Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge MOS Gate Stack

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.295-299

2021

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Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics

Nano research, 2017-03, Vol.10 (3), p.767-775

2017

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Low Subthreshold Swing Double-Gate \beta -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

IEEE electron device letters, 2019-08, Vol.40 (8), p.1317-1320

2019

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Abnormal Bias-Temperature Stress and Thermal Instability of \beta -Ga2O3 Nanomembrane Field-Effect Transistor

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.1124-1128

2018

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Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap

Applied physics letters, 2015-11, Vol.107 (20)

2015

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A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

Micromachines (Basel), 2024-01, Vol.15 (1), p.133

2024

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Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

Micromachines (Basel), 2021-11, Vol.12 (12), p.1441

2021

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Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors

Advanced electronic materials, 2023-11, Vol.9 (11), p.n/a

2023

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High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

AIP advances, 2016-05, Vol.6 (5), p.055026-055026-6

2016

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Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Communications engineering, 2024-01, Vol.3 (1), p.15-7, Article 15

2024

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Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness

All polymer encapsulated, highly-sensitive MoS2 phototransistors on flexible PAR substrate

Wavelength-selective enhancement of photo-responsivity in metal-gated multi-layer MoS2 phototransistors

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption

Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer

Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer

Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data

Supervised Multivariate Kernel Density Estimation for Enhanced Plasma Etching Endpoint Detection

Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors

Electrical Contact Analysis of Multilayer MoS2 Transistor With Molybdenum Source/Drain Electrodes

Effect of Al2O3 Passivation on Electrical Properties of \beta -Ga2O3 Field-Effect Transistor

Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study

Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors

Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge MOS Gate Stack

Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics

Low Subthreshold Swing Double-Gate \beta -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics

Abnormal Bias-Temperature Stress and Thermal Instability of \beta -Ga2O3 Nanomembrane Field-Effect Transistor

Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors

High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

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