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High-Precision Mapping and Analysis of Wafer-Scale Distortions in InP Membranes to Si 3D Integration

IEEE access, 2024, Vol.12, p.92215-92226

2024

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Short Polarization Converter Optimized for Active-Passive Integration in InGaAsP-InP

IEEE photonics technology letters, 2007-10, Vol.19 (20), p.1673-1675

2007

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Bimolecular recombination in ambipolar organic field effect transistors

Organic electronics, 2009-08, Vol.10 (5), p.994-997

2009

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Heterogeneously integrated III-V/silicon distributed feedback lasers

Optics letters, 2013-12, Vol.38 (24), p.5434

2013

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Controlled polarization switching in VCSELs by means of asymmetric current injection

IEEE photonics technology letters, 2004-03, Vol.16 (3), p.708-710

2004

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Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

Journal of crystal growth, 2002-05, Vol.241 (1), p.15-18

2002

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Surface plasmon dispersion in metal hole array lasers

Optics express, 2013-11, Vol.21 (22), p.27422-27437

2013

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III-V-on-silicon multi-frequency lasers

Optics express, 2013-06, Vol.21 (11), p.13675-13683

2013

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Stacking, polarization control, and lasing of wavelength tunable (1.55 μm region) InAs/InGaAsP/InP (1 0 0) quantum dots

Journal of crystal growth, 2007, Vol.298, p.553-557

2007

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Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Applied physics letters, 2006-08, Vol.89 (7)

2006

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Towards all-electrical spin injection and detection in GaAs

Physica status solidi. C, 2006-12, Vol.3 (12), p.4176-4179

2006

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Towards all electrical spin injection and detection in GaAs in a lateral geometry

Journal of superconductivity, 2005-06, Vol.18 (3), p.379-384

2005

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Butt joint integrated extended cavity InAs/ InP (100) quantum dot laser emitting around 1.55 μm

Electronics letters, 2008-04, Vol.44 (8), p.522-524

2008

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Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.93-94

2010

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InP nanowire array solar cell with cleaned sidewalls

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.3389-3392

2013

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Controlled Anodic Oxidation for High Precision Etch Depth in AlGaAs III‐V Semiconductor Structures

Journal of the Electrochemical Society, 1998-03, Vol.145 (3), p.1076-1079

1998

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1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy

IOP conference series. Materials Science and Engineering, 2009-11, Vol.6 (1), p.012004

2009

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Influence of ICP etching on surface morphology of InP substrates

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.322-325

2004

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Short Polarization Filter in Pillar-Based Photonic Crystals

IEEE photonics technology letters, 2008-08, Vol.20 (16), p.1369-1371

2008

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Polarization control of gain of stacked InAs∕InP (100) quantum dots at 1.55μm: Interplay between ground and excited state transitions

Applied physics letters, 2008-03, Vol.92 (12)

2008

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Polarization control of gain of stacked In As ∕ In P (100) quantum dotsat 1.55 μ m : Interplay between ground and excited state transitions

Applied physics letters, 2008-03, Vol.92 (12), p.123113-123113-3

2008

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Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm

Electronics letters, 2008-04, Vol.44 (8), p.1

2008

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Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 mu m

Electronics letters, 2008-04, Vol.44 (8), p.1-1

2008

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Record performance of a CW metallic subwavelength-cavity laser at room temperature

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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Room temperature lasing in subwavelength cylindrical metallic cavity under pulse electric injection

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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High-Precision Mapping and Analysis of Wafer-Scale Distortions in InP Membranes to Si 3D Integration

Short Polarization Converter Optimized for Active-Passive Integration in InGaAsP-InP

Bimolecular recombination in ambipolar organic field effect transistors

Heterogeneously integrated III-V/silicon distributed feedback lasers

Controlled polarization switching in VCSELs by means of asymmetric current injection

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

Surface plasmon dispersion in metal hole array lasers

III-V-on-silicon multi-frequency lasers

Stacking, polarization control, and lasing of wavelength tunable (1.55 μm region) InAs/InGaAsP/InP (1 0 0) quantum dots

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Towards all-electrical spin injection and detection in GaAs

Towards all electrical spin injection and detection in GaAs in a lateral geometry

Butt joint integrated extended cavity InAs/ InP (100) quantum dot laser emitting around 1.55 μm

Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

InP nanowire array solar cell with cleaned sidewalls

Controlled Anodic Oxidation for High Precision Etch Depth in AlGaAs III‐V Semiconductor Structures

1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy

Influence of ICP etching on surface morphology of InP substrates

Short Polarization Filter in Pillar-Based Photonic Crystals

Polarization control of gain of stacked InAs∕InP (100) quantum dots at 1.55μm: Interplay between ground and excited state transitions

Polarization control of gain of stacked In As ∕ In P (100) quantum dotsat 1.55 μ m : Interplay between ground and excited state transitions

Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 µm

Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 mu m

Record performance of a CW metallic subwavelength-cavity laser at room temperature

Room temperature lasing in subwavelength cylindrical metallic cavity under pulse electric injection

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