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Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars

Nano letters, 2017-04, Vol.17 (4), p.2627-2633

2017

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Monolithically Integrated InP 1 [Formula Omitted] 16 Optical Switch With Wavelength-Insensitive Operation

IEEE photonics technology letters, 2010-02, Vol.22 (3), p.143-145

2010

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Integrated two-state AWG-based multiwavelength laser

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.956-958

2005

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Real versus Measured Surface Potentials in Scanning Kelvin Probe Microscopy

ACS nano, 2008-04, Vol.2 (4), p.622-626

2008

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A novel 3D stacking method for Opto-electronic dies on CMOS ICs

Optics express, 2012-12, Vol.20 (26), p.B386-B392

2012

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Calibration of an InP-Based Monolithically Integrated Optical Pulse Shaper

IEEE photonics journal, 2013-12, Vol.5 (6), p.6602317-6602317

2013

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High-Performance InP-Based Photodetector in an Amplifier Layer Stack on Semi-Insulating Substrate

IEEE photonics technology letters, 2008-12, Vol.20 (23), p.1941-1943

2008

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Ultrafast All-Optical Wavelength Routing of Data Packets Utilizing an SOA-Based Wavelength Converter and a Monolithically Integrated Optical Flip-Flop

IEEE journal of selected topics in quantum electronics, 2008-05, Vol.14 (3), p.801-807

2008

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Volltext

Controlled polarization switching in VCSELs by means of asymmetric current injection

IEEE photonics technology letters, 2004-03, Vol.16 (3), p.708-710

2004

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Volltext

Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010, p.93-94

2010

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Volltext

Stacking, polarization control, and lasing of wavelength tunable (1.55 μm region) InAs/InGaAsP/InP (1 0 0) quantum dots

Journal of crystal growth, 2007, Vol.298, p.553-557

2007

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Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection

IEEE photonics technology letters, 2000-08, Vol.12 (8), p.945-947

2000

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Volltext

Retrieving pulse profiles from pump-probe measurements on magnetization dynamics

Journal of applied physics, 2004-06, Vol.95 (11), p.7447-7449

2004

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Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Applied physics letters, 2006-08, Vol.89 (7)

2006

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Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8- \mu\hbox Wavelength Range

IEEE photonics journal, 2012-12, Vol.4 (6), p.2292-2306

2012

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Low-loss low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

IEEE photonics technology letters, 1999-02, Vol.11 (2), p.161-163

1999

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Volltext

Stress-induced effects by the anodic oxide in ridge waveguide laser diodes

IEEE journal of quantum electronics, 2000-10, Vol.36 (10), p.1174-1183

2000

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Volltext

Submicron active-passive integration with position and number controlled InAs∕InP (100) quantum dots (1.55μm wavelength region) by selective-area growth

Applied physics letters, 2007-09, Vol.91 (13)

2007

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Integrated 2×2 quantum dot optical crossbar switch in 1.55 [micro sign]m wavelength range

Electronics letters, 2009, Vol.45 (6), p.313

2009

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Integrated 2 × 2 quantum dot optical crossbar switch in 1.55 µm wavelength range

Electronics letters, 2009-03, Vol.45 (6), p.1

2009

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Integrated 2 2 quantum dot optical crossbar switch in 1.55 mu m wavelength range

Electronics letters, 2009-03, Vol.45 (6), p.1-1

2009

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Polarization control of gain of stacked InAs∕InP (100) quantum dots at 1.55μm: Interplay between ground and excited state transitions

Applied physics letters, 2008-03, Vol.92 (12)

2008

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Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior

IEEE journal of quantum electronics, 1998-08, Vol.34 (8), p.1474-1479

1998

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Volltext

Monolithically Integrated InP 1 \times 16 Optical Switch With Wavelength-Insensitive Operation

IEEE photonics technology letters, 2010-02, Vol.22 (3), p.143-145

2010

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Volltext

Integrated 2 × 2 quantum dot optical crossbar switch in 1.55 μm wavelength range

Electronics letters, 2009, Vol.45 (6), p.313-314

2009

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Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars

Monolithically Integrated InP 1 [Formula Omitted] 16 Optical Switch With Wavelength-Insensitive Operation

Integrated two-state AWG-based multiwavelength laser

Real versus Measured Surface Potentials in Scanning Kelvin Probe Microscopy

A novel 3D stacking method for Opto-electronic dies on CMOS ICs

Calibration of an InP-Based Monolithically Integrated Optical Pulse Shaper

High-Performance InP-Based Photodetector in an Amplifier Layer Stack on Semi-Insulating Substrate

Ultrafast All-Optical Wavelength Routing of Data Packets Utilizing an SOA-Based Wavelength Converter and a Monolithically Integrated Optical Flip-Flop

Controlled polarization switching in VCSELs by means of asymmetric current injection

Formation of site-controlled InAs/InP quantum dots and their integration into planar structures

Stacking, polarization control, and lasing of wavelength tunable (1.55 μm region) InAs/InGaAsP/InP (1 0 0) quantum dots

Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection

Retrieving pulse profiles from pump-probe measurements on magnetization dynamics

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Measurement and Analysis of Temperature-Dependent Optical Modal Gain in Single-Layer InAs/InP(100) Quantum-Dot Amplifiers in the 1.6- to 1.8- \mu\hbox Wavelength Range

Low-loss low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

Stress-induced effects by the anodic oxide in ridge waveguide laser diodes

Submicron active-passive integration with position and number controlled InAs∕InP (100) quantum dots (1.55μm wavelength region) by selective-area growth

Integrated 2×2 quantum dot optical crossbar switch in 1.55 [micro sign]m wavelength range

Integrated 2 × 2 quantum dot optical crossbar switch in 1.55 µm wavelength range

Integrated 2 2 quantum dot optical crossbar switch in 1.55 mu m wavelength range

Polarization control of gain of stacked InAs∕InP (100) quantum dots at 1.55μm: Interplay between ground and excited state transitions

Fabrication of short GaAs wet-etched mirror lasers and their complex spectral behavior

Monolithically Integrated InP 1 \times 16 Optical Switch With Wavelength-Insensitive Operation

Integrated 2 × 2 quantum dot optical crossbar switch in 1.55 μm wavelength range

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