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Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates

Nano letters, 2014-05, Vol.14 (5), p.2604-2609

2014

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Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications

Nano letters, 2011-03, Vol.11 (3), p.1276-1279

2011

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Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy

Nanotechnology, 2016-03, Vol.27 (9), p.095601-095601

2016

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Self-assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

Nano research, 2018-01, Vol.11 (1), p.565-576

2018

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Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Nano letters, 2012-12, Vol.12 (12), p.6119-6125

2012

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Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Nano letters, 2017-09, Vol.17 (9), p.5213-5221

2017

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Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (4), Article 045302

2010

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Scaling growth kinetics of self-induced GaN nanowires

Applied physics letters, 2012-04, Vol.100 (15), p.153101-153101-4

2012

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Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy

Journal of the American Chemical Society, 2013-07, Vol.135 (28), p.10242-10245

2013

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Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant

Nano letters, 2017-07, Vol.17 (7), p.4255-4260

2017

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Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

Nano letters, 2016-02, Vol.16 (2), p.973-980

2016

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Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)

Crystal growth & design, 2011-09, Vol.11 (9), p.4001-4008

2011

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Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108, 202101 (2016)]

Applied physics letters, 2017-11, Vol.111 (21)

2017

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Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Nano letters, 2013-07, Vol.13 (7), p.3298-3304

2013

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Control over the Number Density and Diameter of GaAs Nanowires on Si(111) Mediated by Droplet Epitaxy

Nano letters, 2013-08, Vol.13 (8), p.3607-3613

2013

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Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

APL materials, 2023-09, Vol.11 (9), p.091120-091120-7

2023

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High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

Crystal growth & design, 2015-08, Vol.15 (8), p.4104-4109

2015

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Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Nano research, 2010-07, Vol.3 (7), p.528-536

2010

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Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

Carbon (New York), 2013-05, Vol.56, p.339-350

2013

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Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires

Applied physics letters, 2014-09, Vol.105 (12)

2014

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Strain Engineering of Nanowire Multi-Quantum Well Demonstrated by Raman Spectroscopy

Nano letters, 2013-09, Vol.13 (9), p.4053-4059

2013

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Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

Beilstein journal of nanotechnology, 2019, Vol.10 (1), p.1177-1187

2019

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Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases

Journal of applied physics, 2015-02, Vol.117 (5)

2015

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Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates

Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications

Growth map for Ga-assisted growth of GaAs nanowires on Si(111) substrates by molecular beam epitaxy

Self-assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

Scaling growth kinetics of self-induced GaN nanowires

Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy

Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)

Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108, 202101 (2016)]

Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

Control over the Number Density and Diameter of GaAs Nanowires on Si(111) Mediated by Droplet Epitaxy

Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires

Strain Engineering of Nanowire Multi-Quantum Well Demonstrated by Raman Spectroscopy

Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases

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