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Aharonov-Bohm oscillations, quantum decoherence and amplitude modulation in mesoscopic InGaAs/InAlAs rings

Journal of physics. Condensed matter, 2013-10, Vol.25 (43), p.435301-7

2013

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InSb quantum-well structures for electronic device applications

Journal of crystal growth, 2009-03, Vol.311 (7), p.1972-1975

2009

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Gate depletion of an InSb two-dimensional electron gas

Applied physics letters, 2013-09, Vol.103 (12)

2013

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Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Applied physics letters, 2008-05, Vol.92 (20)

2008

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A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Applied physics letters, 2008-08, Vol.93 (6)

2008

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Observation of surface-state transport in ultrathin Sb

Physical review. B, Condensed matter and materials physics, 2015-05, Vol.91 (20), Article 205317

2015

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Effect of strain and confinement on the effective mass of holes in InSb quantum wells

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied physics letters, 2009-01, Vol.94 (1)

2009

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Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

Applied physics letters, 2008-03, Vol.92 (11)

2008

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A high performance In 0.53 Ga 0.47 As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied physics letters, 2009-01, Vol.94 (1), p.013511-013511-3

2009

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High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Applied physics letters, 2008-09, Vol.93 (13)

2008

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High mobility HfO 2 -based In 0.53 Ga 0.47 As n -channelmetal-oxide-semiconductor field effect transistors usinga germanium interfacial passivation layer

Applied physics letters, 2008-09, Vol.93 (13), p.132902-132902-3

2008

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A study of metal-oxide-semiconductor capacitors on GaAs, In 0.53 Ga 0.47 As , InAs, and InSb substrates using a germanium interfacial passivation layer

Applied physics letters, 2008-08, Vol.93 (6), p.062111-062111-3

2008

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Self-aligned n -channel metal-oxide-semiconductor field effect transistoron high-indium-content In 0.53 Ga 0.47 As and InP using physical vapor deposition HfO 2 and silicon interface passivation layer

Applied physics letters, 2008-05, Vol.92 (20), p.202903-202903-3

2008

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Metal gate: HfO 2 metal-oxide-semiconductor structures onhigh-indium-content InGaAs substrate using physical vapor deposition

Applied physics letters, 2008-03, Vol.92 (11), p.112904-112904-3

2008

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Cyclotron resonance in P-doped InSb quantum wells

Physics procedia, 2010, Vol.3 (2), p.1201-1205

2010

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InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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Reducing Rext in laser annealed enhancement-mode In0.53Ga0.47As surface channel n-MOSFET

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.38-39

2010

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Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Electrochemical and solid-state letters, 2009, Vol.12 (4), p.H131

2009

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Evaluation of the Long-Term Storage Stability of the Cyanide Antidote: Dimethyl Trisulfide and Degradation Product Identification

ACS omega, 2020-10, Vol.5 (42), p.27171-27179

2020

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MULTI-WAVELENGTH OBSERVATIONS OF BLAZAR AO 0235+164 IN THE 2008-2009 FLARING STATE

The Astrophysical journal, 2012-06, Vol.751 (2), p.1-20

2012

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Epitaxial growth of elemental Sb quantum wells

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

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Aharonov-Bohm oscillations, quantum decoherence and amplitude modulation in mesoscopic InGaAs/InAlAs rings

InSb quantum-well structures for electronic device applications

Gate depletion of an InSb two-dimensional electron gas

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Observation of surface-state transport in ultrathin Sb

Effect of strain and confinement on the effective mass of holes in InSb quantum wells

A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

A high performance In 0.53 Ga 0.47 As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

High mobility HfO 2 -based In 0.53 Ga 0.47 As n -channelmetal-oxide-semiconductor field effect transistors usinga germanium interfacial passivation layer

A study of metal-oxide-semiconductor capacitors on GaAs, In 0.53 Ga 0.47 As , InAs, and InSb substrates using a germanium interfacial passivation layer

Self-aligned n -channel metal-oxide-semiconductor field effect transistoron high-indium-content In 0.53 Ga 0.47 As and InP using physical vapor deposition HfO 2 and silicon interface passivation layer

Metal gate: HfO 2 metal-oxide-semiconductor structures onhigh-indium-content InGaAs substrate using physical vapor deposition

Cyclotron resonance in P-doped InSb quantum wells

InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack

Reducing Rext in laser annealed enhancement-mode In0.53Ga0.47As surface channel n-MOSFET

Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

Evaluation of the Long-Term Storage Stability of the Cyanide Antidote: Dimethyl Trisulfide and Degradation Product Identification

MULTI-WAVELENGTH OBSERVATIONS OF BLAZAR AO 0235+164 IN THE 2008-2009 FLARING STATE

Epitaxial growth of elemental Sb quantum wells

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