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An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

IEEE transactions on power electronics, 2017-08, Vol.32 (8), p.6416-6433

2017

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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

IEEE transactions on power electronics, 2017-07, Vol.32 (7), p.5539-5549

2017

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IEEE_Xplore

GaN power IC technology on p -GaN gate HEMT platform

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SG0801

2020

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Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

IEEE electron device letters, 2017-07, Vol.38 (7), p.929-932

2017

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IEEE_Xplore

Dynamic R} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

IEEE electron device letters, 2017-07, Vol.38 (7), p.937-940

2017

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IEEE_Xplore

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

IEEE electron device letters, 2017-09, Vol.38 (9), p.1282-1285

2017

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IEEE_Xplore

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

IEEE electron device letters, 2015-12, Vol.36 (12), p.1287-1290

2015

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IEEE_Xplore

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2831-2837

2016

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IEEE_Xplore

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

NPJ 2D materials and applications, 2019-06, Vol.3 (1), Article 24

2019

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Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

IEEE photonics technology letters, 2016-12, Vol.28 (24), p.2803-2806

2016

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IEEE_Xplore

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs

IEEE electron device letters, , Vol.40 (4), p.526-529

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IEEE_Xplore

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

IEEE electron device letters, 2018-10, p.1-1

2018

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High-Capacitance-Density -GaN Gate Capacitors for High-Frequency Power Integration

IEEE electron device letters, , Vol.39 (9), p.1362-1365

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IEEE_Xplore

Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs

IEEE transactions on industrial electronics (1982), 2022-07, Vol.69 (7), p.6784-6793

2022

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IEEE_Xplore

VTH Instability of -GaN Gate HEMTs Under Static and Dynamic Gate Stress

IEEE electron device letters, 2018-10, Vol.39 (10), p.1576-1579

2018

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IEEE_Xplore

V TH Instability of [Formula Omitted]-GaN Gate HEMTs Under Static and Dynamic Gate Stress

IEEE electron device letters, 2018-01, Vol.39 (10), p.1576

2018

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

IEEE electron device letters, 2018-02, Vol.39 (2), p.260-263

2018

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IEEE_Xplore

GaN Power Integration Technology and Its Future Prospects

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1365-1382

2024

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IEEE_Xplore

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

IEEE electron device letters, 2018-07, Vol.39 (7), p.1003-1006

2018

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IEEE_Xplore

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2106-2112

2019

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IEEE_Xplore

Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment

Nanotechnology, 2017-04, Vol.28 (17), p.175202-175202

2017

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Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiN x Gate Dielectric

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10)

2018

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Enhanced dielectric deposition on single-layer MoS 2 with low damage using remote N 2 plasma treatment

Nanotechnology, 2017-04, Vol.28 (17), p.175202

2017

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Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

IEEE electron device letters, 2017-07, Vol.38 (7), p.929-932

2017

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An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

GaN power IC technology on p -GaN gate HEMT platform

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

Dynamic R} of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic Drain

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

Switching Behaviors of On-Chip Photon Source on AlGaN/GaN-on-Si Power HEMTs Platform

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in -GaN Gate HEMTs

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

High-Capacitance-Density -GaN Gate Capacitors for High-Frequency Power Integration

Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs

VTH Instability of -GaN Gate HEMTs Under Static and Dynamic Gate Stress

V TH Instability of [Formula Omitted]-GaN Gate HEMTs Under Static and Dynamic Gate Stress

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

GaN Power Integration Technology and Its Future Prospects

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode

Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiN x Gate Dielectric

Enhanced dielectric deposition on single-layer MoS 2 with low damage using remote N 2 plasma treatment

Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer

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