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Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET

Scientific reports, 2017-08, Vol.7 (1), p.8257-7, Article 8257

2017

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Editorial: Focus on Neuromorphic Circuits and Systems using Emerging Devices

Neuromorphic computing and engineering, 2024-03, Vol.4 (1), p.10201

2024

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Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories

National Academy of Sciences, India. Proceedings. Section A. Physical Sciences, 2023-09, Vol.93 (3), p.459-476

2023

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A temporally and spatially local spike-based backpropagation algorithm to enable training in hardware

Neuromorphic computing and engineering, 2023-09, Vol.3 (3), p.34009

2023

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Design Optimization of Metal Nanocrystal Memory-Part I: Nanocrystal Array Engineering

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.3095-3102

2006

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Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

IEEE electron device letters, 2012-10, Vol.33 (10), p.1396-1398

2012

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PrxCa1−xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem

APL materials, 2019-09, Vol.7 (9), p.091112-091112-11

2019

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Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Nanocrystal-based Ohmic contacts on n and p-type germanium

Applied physics letters, 2012-04, Vol.100 (14), p.142107-142107-5

2012

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Design Optimization of Metal Nanocrystal Memory-Part II: Gate-Stack Engineering

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.3103-3109

2006

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Temperature Effects in SET/RESET Voltage-Time Dilemma in Pr0.7Ca0.3MnO3-Based RRAM

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.829-832

2019

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Arbitrary Spike Time Dependent Plasticity (STDP) in Memristor by Analog Waveform Engineering

IEEE electron device letters, 2017-06, Vol.38 (6), p.740-743

2017

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Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr 0.7 Ca 0.3 MnO 3 -Based RRAM

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.829-832

2019

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An On-Chip Trainable and the Clock-Less Spiking Neural Network With 1R Memristive Synapses

IEEE transactions on biomedical circuits and systems, 2018-08, Vol.12 (4), p.884-893

2018

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Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices

Ceramics international, 2022-03, Vol.48 (6), p.7876-7884

2022

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An Accurate Process-Induced Variability-Aware Compact Model-Based Circuit Performance Estimation for Design-Technology Co-Optimization

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.45-50

2022

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Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3123-3132

2009

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Stochasticity invariance control in Pr 1−x Ca x MnO 3 RRAM to enable large-scale stochastic recurrent neural networks

Neuromorphic computing and engineering, 2022-03, Vol.2 (1), p.14001

2022

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Integration of Non-Filamentary Pr0.7Ca0.3MnO3- Based Memristor With Silicon-PN Junction

IEEE electron device letters, 2023-05, Vol.44 (5), p.741-744

2023

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Integration of Non-Filamentary Pr 0.7 Ca 0.3 MnO 3 – Based Memristor With Silicon-PN Junction

IEEE electron device letters, 2023-05, Vol.44 (5), p.741-744

2023

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Threshold Voltage Variability in Nanosheet GAA Transistors

IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4433-4438

2019

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Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFET

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3071-3076

2017

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Non-ideal program-time conservation in charge trap flash for deep learning

Semiconductor science and technology, 2023-10, Vol.38 (10), p.105008

2023

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Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2614-2620

2020

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Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5520-5525

2020

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Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET

Editorial: Focus on Neuromorphic Circuits and Systems using Emerging Devices

Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories

A temporally and spatially local spike-based backpropagation algorithm to enable training in hardware

Design Optimization of Metal Nanocrystal Memory-Part I: Nanocrystal Array Engineering

Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

PrxCa1−xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem

Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme

Nanocrystal-based Ohmic contacts on n and p-type germanium

Design Optimization of Metal Nanocrystal Memory-Part II: Gate-Stack Engineering

Temperature Effects in SET/RESET Voltage-Time Dilemma in Pr0.7Ca0.3MnO3-Based RRAM

Arbitrary Spike Time Dependent Plasticity (STDP) in Memristor by Analog Waveform Engineering

Temperature Effects in SET/RESET Voltage–Time Dilemma in Pr 0.7 Ca 0.3 MnO 3 -Based RRAM

An On-Chip Trainable and the Clock-Less Spiking Neural Network With 1R Memristive Synapses

Impact of oxygen partial pressure on resistive switching characteristics of PLD deposited ZnFe2O4 thin films for RRAM devices

An Accurate Process-Induced Variability-Aware Compact Model-Based Circuit Performance Estimation for Design-Technology Co-Optimization

Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

Stochasticity invariance control in Pr 1−x Ca x MnO 3 RRAM to enable large-scale stochastic recurrent neural networks

Integration of Non-Filamentary Pr0.7Ca0.3MnO3- Based Memristor With Silicon-PN Junction

Integration of Non-Filamentary Pr 0.7 Ca 0.3 MnO 3 – Based Memristor With Silicon-PN Junction

Threshold Voltage Variability in Nanosheet GAA Transistors

Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFET

Non-ideal program-time conservation in charge trap flash for deep learning

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3-Based RRAM

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