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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Applied physics letters, 2016-10, Vol.109 (16)

2016

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Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

Physica Status Solidi. B: Basic Solid State Physics, 2013-02, Vol.250 (2), p.283-290

2013

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Development of high-efficiency and high-power vertical light emitting diodes

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100208-1-100208-6

2014

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Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

Applied physics express, 2013-11, Vol.6 (11), p.112101

2013

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Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence

physica status solidi (b), 2023-08, Vol.260 (8), p.n/a

2023

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Burn-in mechanism of 450nm InGaN ridge laser test structures

Applied physics letters, 2009-08, Vol.95 (5)

2009

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Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

IEEE journal of quantum electronics, 2014-11, Vol.50 (11), p.911-920

2014

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Spectral dependence of light extraction efficiency of high-power III-nitride light-emitting diodes

Physica status solidi. PSS-RRL. Rapid research letters, 2015-05, Vol.9 (5), p.312-316

2015

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Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures

Optics express, 2016-02, Vol.24 (3), p.2971-2980

2016

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Effect of antimony on growth mode and properties of thick InGaN layers

Journal of crystal growth, 2015-03, Vol.414, p.42-48

2015

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Back Cover: Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes (Phys. Status Solidi B 2/2013)

physica status solidi (b), 2013-02, Vol.250 (2), p.n/a

2013

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Burn-in mechanism of 450 nm InGaN ridge laser test structures

Applied physics letters, 2009-08, Vol.95 (5), p.051104-051104-3

2009

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Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si / SiO 2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

Physical review letters, 2010-01, Vol.104 (4), Article 046402

2010

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Spin-dependent recombination between phosphorus donors in silicon and Si/SiO{2} interface states investigated with pulsed electrically detected electron double resonance

Physical review letters, 2010-01, Vol.104 (4), p.046402-046402

2010

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(Invited) Considerations of LED Efficiency for the Development of Phosphors for Solid State Lighting

Meeting abstracts (Electrochemical Society), 2016-09, Vol.MA2016-02 (42), p.3127-3127

2016

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Novel evaluation procedure for internal and extraction efficiency of high-power blue LEDs

2014 International Conference Laser Optics, 2014, p.1-1

2014

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Structural insights into heme binding to IL-36α proinflammatory cytokine

Scientific reports, 2019-11, Vol.9 (1), p.16893-14, Article 16893

2019

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Assessment of Complication Risk in the Treatment of Proximal Humerus Fractures: A Retrospective Analysis of 4019 Patients

Journal of clinical medicine, 2023-02, Vol.12 (5), p.1844

2023

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Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

Development of high-efficiency and high-power vertical light emitting diodes

Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence

Burn-in mechanism of 450nm InGaN ridge laser test structures

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

Spectral dependence of light extraction efficiency of high-power III-nitride light-emitting diodes

Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures

Effect of antimony on growth mode and properties of thick InGaN layers

Back Cover: Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes (Phys. Status Solidi B 2/2013)

Burn-in mechanism of 450 nm InGaN ridge laser test structures

Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si / SiO 2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

Spin-dependent recombination between phosphorus donors in silicon and Si/SiO{2} interface states investigated with pulsed electrically detected electron double resonance

(Invited) Considerations of LED Efficiency for the Development of Phosphors for Solid State Lighting

Novel evaluation procedure for internal and extraction efficiency of high-power blue LEDs

A localized view on molecular dissociation via electron-ion partial covariance

Structural insights into heme binding to IL-36α proinflammatory cytokine

Assessment of Complication Risk in the Treatment of Proximal Humerus Fractures: A Retrospective Analysis of 4019 Patients

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