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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Applied physics letters, 2001-11, Vol.79 (20), p.3230-3232

2001

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Metal organic vapour phase epitaxy of GaN and lateral overgrowth

Reports on progress in physics, 2004-05, Vol.67 (5), p.667-715

Gibart, Pierre

2004

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Temperature quenching of photoluminescence intensities in undoped and doped GaN

Journal of applied physics, 1999-10, Vol.86 (7), p.3721-3728

1999

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Epitaxial Lateral Overgrowth of GaN

physica status solidi (b), 2001-09, Vol.227 (1), p.1-43

2001

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Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

Journal of applied physics, 2000-05, Vol.87 (9), p.4175-4181

2000

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III nitrides and UV detection

Journal of physics. Condensed matter, 2001-08, Vol.13 (32), p.7115-7137

2001

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Atomic structure of pyramidal defects in Mg-doped GaN

Physical review. B, Condensed matter, 2003-12, Vol.68 (23), Article 235214

2003

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Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

Applied physics letters, 1998-02, Vol.72 (8), p.921-923

1998

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Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Journal of crystal growth, 2007-12, Vol.309 (2), p.113-120

2007

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Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

Journal of crystal growth, 2007-02, Vol.299 (1), p.103-108

2007

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Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.282-289

2007

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Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

Applied physics letters, 2000-08, Vol.77 (6), p.880-882

2000

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All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.223-227

2007

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AlGaN-based UV photodetectors

Journal of crystal growth, 2001-09, Vol.230 (3), p.537-543

2001

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Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

Journal of applied physics, 2000-08, Vol.88 (4), p.2081-2091

2000

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Direct observation of the core structures of threading dislocations in GaN

Applied physics letters, 1998-05, Vol.72 (21), p.2680-2682

1998

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Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Journal of applied physics, 2004-07, Vol.96 (1), p.799-806

2004

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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Applied physics letters, 2006-05, Vol.88 (20)

2006

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Field dependent transformation of electron traps in GaN p–n diodes grown by metal–organic chemical vapour deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-11, Vol.113 (3), p.248-252

2004

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Field dependent transformation of electron traps in GaN p–n diodes grown by metal–organic chemical vapour deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-11, Vol.113 (3), p.248-252

2004

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High-performance GaN p-n junction photodetectors for solar ultraviolet applications

Semiconductor science and technology, 1998-09, Vol.13 (9), p.1042-1046

1998

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Contribution of dislocations to carrier recombination and transport in highly excited ELO and HYPE GaN layers

Physica status solidi. B, Basic research, 2006-06, Vol.243 (7), p.1426

2006

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Photoconductor gain mechanisms in GaN ultraviolet detectors

Applied physics letters, 1997-08, Vol.71 (7), p.870-872

1997

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Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Journal of applied physics, 2004-06, Vol.95 (12), p.8275-8279

2004

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Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth

Journal of crystal growth, 1999, Vol.205 (3), p.245-252

1999

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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Metal organic vapour phase epitaxy of GaN and lateral overgrowth

Temperature quenching of photoluminescence intensities in undoped and doped GaN

Epitaxial Lateral Overgrowth of GaN

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

III nitrides and UV detection

Atomic structure of pyramidal defects in Mg-doped GaN

Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

AlGaN-based UV photodetectors

Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

Direct observation of the core structures of threading dislocations in GaN

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Field dependent transformation of electron traps in GaN p–n diodes grown by metal–organic chemical vapour deposition

Field dependent transformation of electron traps in GaN p–n diodes grown by metal–organic chemical vapour deposition

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

Contribution of dislocations to carrier recombination and transport in highly excited ELO and HYPE GaN layers

Photoconductor gain mechanisms in GaN ultraviolet detectors

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth

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