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Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Nature communications, 2013-04, Vol.4 (1), p.1751-1751, Article 1751

2013

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Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Nanotechnology, 2023-09, Vol.34 (37), p.375602

2023

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Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN

Applied physics letters, 2018-07, Vol.113 (3)

2018

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Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

Nanotechnology, 2023-11, Vol.34 (46), p.465605

2023

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A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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High-frequency acoustic charge transport in GaAs nanowires

Nanotechnology, 2014-04, Vol.25 (13), p.135204-6

2014

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Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

Nanotechnology, 2014-11, Vol.25 (45), p.455702-455702

2014

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A route for the top-down fabrication of ordered ultrathin GaN nanowires

Nanotechnology, 2023-05, Vol.34 (20), p.205301

2023

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Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

Nanotechnology, 2017-10, Vol.28 (42), p.425602-425602

2017

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Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Nanotechnology, 2024-06, Vol.35 (26), p.265702

2024

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Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies

Nanotechnology, 2019-04, Vol.30 (15)

2019

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Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Nano letters, 2015-06, Vol.15 (6), p.3743-3747

2015

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Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Nanotechnology, 2019-05, Vol.30 (21), p.214005

2019

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Physical origin of the incubation time of self-induced GaN nanowires

Applied physics letters, 2011-07, Vol.99 (3), p.033102-033102-3

2011

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Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies

Nanotechnology, 2019-04, Vol.30 (15), p.154002-154002

2019

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Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

Nanotechnology, 2019-03, Vol.30 (11), p.114001-114001

2019

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Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)

Nanotechnology, 2012-08, Vol.23 (30), p.305703-305703

2012

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Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency

Physical review. B, Condensed matter and materials physics, 2014-11, Vol.90 (19), Article 195309

2014

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Si doping effects on (In,Ga)N nanowires

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

Semiconductor science and technology, 2016-07, Vol.31 (7), p.74001

2016

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Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles

Nanotechnology, 2016-06, Vol.27 (32)

2016

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In situ investigation of self-induced GaN nanowire nucleation on Si

Applied physics letters, 2010-07, Vol.97 (4), p.043101-043101-3

2010

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Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

Nanotechnology, 2020-05, Vol.31 (21), p.214002

2020

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Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

Nano letters, 2019-09, Vol.19 (9), p.5938-5948

2019

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Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Nanotechnology, 2015-02, Vol.26 (8), p.085605-085605

2015

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Efficient room-temperature nuclear spin hyperpolarization of a defect atom in a semiconductor

Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

High-frequency acoustic charge transport in GaAs nanowires

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence

A route for the top-down fabrication of ordered ultrathin GaN nanowires

Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils

Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Physical origin of the incubation time of self-induced GaN nanowires

Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111)

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency

Si doping effects on (In,Ga)N nanowires

Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles

In situ investigation of self-induced GaN nanowire nucleation on Si

Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

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