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Single Crystals of Electronic Materials: Growth and Properties

Fornari, Roberto

1, 2018

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A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method

Journal of crystal growth, 2014-02, Vol.388, p.61-69

2014

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Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors

Journal of crystal growth, 2020-03, Vol.534, p.125511, Article 125511

2020

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Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

Materials, 2024-01, Vol.17 (2), p.519

2024

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Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Applied surface science, 2017-08, Vol.412, p.52-57

2017

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Comprehensive Semiconductor Science and Technology

1, 2011

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Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals

Semiconductor science and technology, 2016-02, Vol.31 (3)

2016

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Growth, characterization, and properties of bulk SnO2 single crystals

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.66-73

2014

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Crystal Structure and Ferroelectric Properties of ε‑Ga2O3 Films Grown on (0001)-Sapphire

Inorganic chemistry, 2016-11, Vol.55 (22), p.12079-12084

2016

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High-throughput and cost-effective method for production of high-quality semi-insulating InP substrates

Journal of crystal growth, 2023-12, Vol.623, p.127415, Article 127415

2023

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A study of Indium incorporation efficiency in InGaN grown by MOVPE

Journal of crystal growth, 2004-05, Vol.265 (3), p.434-439

2004

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Growth of wurtzite InN on bulk In2O3(111) wafers

Applied physics letters, 2012-10, Vol.101 (17)

2012

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The real structure of epsilon -Ga2O3 and its relation to Kappa -phase

CrystEngComm, 2017-03, Vol.19 (11), p.1509-1516

2017

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Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β‑Ga2O3 by Metal–Organic Vapor Phase Epitaxy

Crystal growth & design, 2021-11, Vol.21 (11), p.6393-6401

2021

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Analysis of the scattering mechanisms controlling electron mobility in β -Ga 2 O 3 crystals

Semiconductor science and technology, 2016-03, Vol.31 (3), p.35023

2016

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Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga 2 O 3 by Metal–Organic Vapor Phase Epitaxy

Crystal growth & design, 2021-11, Vol.21 (11), p.6393-6401

2021

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Dopant segregations in oxide single-crystal fibers grown by the micro-pulling-down method

Optical materials, 2007-09, Vol.30 (1), p.11-14

2007

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Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.27-33

2014

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Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers

Materials science & engineering. B, Solid-state materials for advanced technology, 2022-12, Vol.286, p.116056, Article 116056

2022

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Innovative back-contact for Sb2Se3-based thin film solar cells

Solar energy, 2023-01, Vol.249, p.414-423

2023

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Innovative back-contact for S b 2 S e 3 -based thin film solar cells

Solar energy, 2023-01, Vol.249, p.414-423

2023

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High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-03, Vol.11 (11), p.3759-3769

2023

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Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ‑Ga2O3

ACS applied materials & interfaces, 2023-10, Vol.15 (39), p.45997-46009

2023

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Interfacial Properties of the SnO/κ-Ga 2 O 3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga 2 O 3

ACS applied materials & interfaces, 2023-10, Vol.15 (39), p.45997-46009

2023

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Single Crystals of Electronic Materials: Growth and Properties

A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method

Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Comprehensive Semiconductor Science and Technology

Analysis of the scattering mechanisms controlling electron mobility in β-Ga2O3 crystals

Growth, characterization, and properties of bulk SnO2 single crystals

Crystal Structure and Ferroelectric Properties of ε‑Ga2O3 Films Grown on (0001)-Sapphire

High-throughput and cost-effective method for production of high-quality semi-insulating InP substrates

A study of Indium incorporation efficiency in InGaN grown by MOVPE

Growth of wurtzite InN on bulk In2O3(111) wafers

The real structure of epsilon -Ga2O3 and its relation to Kappa -phase

Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β‑Ga2O3 by Metal–Organic Vapor Phase Epitaxy

Analysis of the scattering mechanisms controlling electron mobility in β -Ga 2 O 3 crystals

Thermodynamic and Kinetic Effects on the Nucleation and Growth of ε/κ- or β-Ga 2 O 3 by Metal–Organic Vapor Phase Epitaxy

Dopant segregations in oxide single-crystal fibers grown by the micro-pulling-down method

Homoepitaxial growth of β-Ga2O3 layers by metal-organic vapor phase epitaxy

Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers

Innovative back-contact for Sb2Se3-based thin film solar cells

Innovative back-contact for S b 2 S e 3 -based thin film solar cells

High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes

Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ‑Ga2O3

Interfacial Properties of the SnO/κ-Ga 2 O 3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga 2 O 3

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