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A prospective: Quantitative scanning tunneling spectroscopy of semiconductor surfaces

Surface science, 2009-09, Vol.603 (18), p.2841-2844

Feenstra, R.M.

2009

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Growth of nanoscale BaTiO3/SrTiO3 superlattices by molecular-beam epitaxy

Journal of materials research, 2008-05, Vol.23 (5), p.1417-1432

2008

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The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics

Solid state communications, 2009-12, Vol.149 (47), p.2194-2198

2009

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Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctions

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.796-802

Feenstra, R.M.

1999

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A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

Journal of crystal growth, 2006-05, Vol.291 (1), p.301-308

2006

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Low-energy electron reflectivity from graphene: First-principles computations and approximate models

Ultramicroscopy, 2013-07, Vol.130, p.101-108

2013

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Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

Surface science, 2017-05, Vol.659, p.31-42

2017

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Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces

Journal of crystal growth, 2000-02, Vol.209 (2), p.355-363

2000

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Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence

Journal of crystal growth, 2003-03, Vol.249 (3), p.437-444

2003

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Facet formation in strained Si1−x Gex films

Surface science, 1994-09, Vol.316 (3), p.L1075-L1080

1994

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Structure and electronic spectroscopy of steps on GaAs(110) surfaces

Surface science, 2012, Vol.606 (1), p.28-33

2012

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Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment

Materials science forum, 2012-05, Vol.717-720, p.609-612

2012

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Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

Journal of electronic materials, 2009-06, Vol.38 (6), p.718-724

2009

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Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces

Surface science, 2008-09, Vol.602 (17), p.2936-2942

2008

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Kinetics of the Si(111)2 × 1→ 5 × 5 and 7 × 7 transformation studied by scanning tunneling microscopy

Surface science, 1991-02, Vol.243 (1), p.151-165

1991

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Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces

Materials science forum, 2006-10, Vol.527-529, p.1023-1026

2006

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GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

Surface science, 1999-03, Vol.423 (1), p.70-84

1999

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Edge melting of the Ge(111) surface studied by scanning tunneling microscopy

Ultramicroscopy, 1992-07, Vol.42 (A), p.33-40

1992

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Tunneling spectroscopy of the Si(111)2 × 1 surface

Surface science, 1987-03, Vol.181 (1), p.295-306

1987

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Low energy electron microscopy of indium on Si(0 0 1) surfaces

Surface science, 2003-12, Vol.547 (1), p.127-138

2003

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Recent developments in scanning tunneling spectroscopy of semiconductor surfaces

Applied physics. A, Materials science & processing, 2001-04, Vol.72 (S2), p.S193-S199

2001

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Growth of nanoscale BaTiO 3 /SrTiO 3 superlattices by molecular-beam epitaxy

Journal of materials research, 2008-05, Vol.23 (5), p.1417-1432

2008

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A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC

Materials science forum, 2006-10, Vol.527-529, p.743-746, Article 743

2006

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A study of the morphology of GaN seed layers on in situ deposited Si x N y and its effect on properties of overgrown GaN epilayers

Journal of crystal growth, 2006, Vol.291 (1), p.301-308

2006

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Reconstructions of GaN and InGaN surfaces

Applied surface science, 2000-10, Vol.166 (1), p.165-172

2000

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A prospective: Quantitative scanning tunneling spectroscopy of semiconductor surfaces

Growth of nanoscale BaTiO3/SrTiO3 superlattices by molecular-beam epitaxy

The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics

Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctions

A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

Low-energy electron reflectivity from graphene: First-principles computations and approximate models

Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy

Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces

Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence

Facet formation in strained Si1−x Gex films

Structure and electronic spectroscopy of steps on GaAs(110) surfaces

Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment

Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

Step formation on hydrogen-etched 6H-SiC{0 0 0 1} surfaces

Kinetics of the Si(111)2 × 1→ 5 × 5 and 7 × 7 transformation studied by scanning tunneling microscopy

Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces

GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

Edge melting of the Ge(111) surface studied by scanning tunneling microscopy

Tunneling spectroscopy of the Si(111)2 × 1 surface

Low energy electron microscopy of indium on Si(0 0 1) surfaces

Recent developments in scanning tunneling spectroscopy of semiconductor surfaces

Growth of nanoscale BaTiO 3 /SrTiO 3 superlattices by molecular-beam epitaxy

A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC

A study of the morphology of GaN seed layers on in situ deposited Si x N y and its effect on properties of overgrown GaN epilayers

Reconstructions of GaN and InGaN surfaces

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