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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

Applied physics letters, 2003-04, Vol.82 (15), p.2410-2412

2003

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Journal of electronic materials, 2002-05, Vol.31 (5), p.370-375

2002

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Electrical characteristics of magnesium-doped gallium nitride junction diodes

Applied physics letters, 1998-06, Vol.72 (22), p.2841-2843

1998

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Coss related energy loss in power MOSFETs used in zero-voltage-switched applications

2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014, 2014, p.150-156

2014

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An implanted-emitter 4H-SiC bipolar transistor with high current gain

IEEE electron device letters, 2001-03, Vol.22 (3), p.119-120

2001

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COSS hysteresis in advanced superjunction MOSFETs

2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016, p.247-252

2016

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Stacking-fault formation and propagation in 4H-SiC PiN diodes

Journal of electronic materials, 2002-07, Vol.31 (7), p.827-827

2002

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SiC and GaN bipolar power devices

Solid-state electronics, 2000-02, Vol.44 (2), p.277-301

2000

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Silicon carbide photodiode sensor for combustion control

IEEE sensors journal, 2005-10, Vol.5 (5), p.983-988

2005

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Partial dislocations and stacking faults in 4H-SiC PiN diodes

Journal of electronic materials, 2004-05, Vol.33 (5), p.472-476

2004

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Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers

IEEE electron device letters, 2001-03, Vol.22 (3), p.130-132

2001

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High-voltage implanted-emitter 4H-SiC BJTs

IEEE electron device letters, 2002-01, Vol.23 (1), p.16-18

2002

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Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Materials science forum, 2004-01, Vol.457-460, p.537-542

2004

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4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Materials science forum, 2006-10, Vol.527-529, p.1265-1268, Article 1265

2006

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Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

Materials science forum, 2002-04, Vol.389-393, p.427-430

2002

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Determination of Lean Burn Combustion Temperature Using Ultraviolet Emission

IEEE sensors journal, 2008-03, Vol.8 (3), p.255-260

2008

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Reactive Ion Etching of GaN in BCl3 / N 2 Plasmas

Journal of the Electrochemical Society, 1997-08, Vol.144 (8), p.L221-L224

1997

Volltextzugriff (PDF)

Silicon carbide GTOs: static and dynamic characterization

Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248), 2001, Vol.1, p.359-364 vol.1

2001

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Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors

Materials science forum, 2001-01, Vol.353-356, p.739-742

2001

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Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors

Materials science forum, 2000-05, Vol.338-342, p.1391-1394

2000

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Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

Materials science forum, 2000-05, Vol.338-342, p.1367-1370

2000

Volltextzugriff (PDF)

Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82 , 2410 (2003)]

Applied physics letters, 2004-06, Vol.84 (23), p.4816-4816

2004

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Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates

Materials science forum, 1998-02, Vol.264-268, p.1415-1420

1998

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Extended Defects in 4H-SiC PiN Diodes

MRS proceedings, 2002, Vol.742, Article K3.7

2002

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Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC

Materials science forum, 2002-04, Vol.389-393, p.1329-1332

2002

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Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes

Stacking-fault formation and propagation in 4H-SiC PiN diodes

Electrical characteristics of magnesium-doped gallium nitride junction diodes

Coss related energy loss in power MOSFETs used in zero-voltage-switched applications

An implanted-emitter 4H-SiC bipolar transistor with high current gain

COSS hysteresis in advanced superjunction MOSFETs

Stacking-fault formation and propagation in 4H-SiC PiN diodes

SiC and GaN bipolar power devices

Silicon carbide photodiode sensor for combustion control

Partial dislocations and stacking faults in 4H-SiC PiN diodes

Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers

High-voltage implanted-emitter 4H-SiC BJTs

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

Determination of Lean Burn Combustion Temperature Using Ultraviolet Emission

Reactive Ion Etching of GaN in BCl3 / N 2 Plasmas

Silicon carbide GTOs: static and dynamic characterization

Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors

Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors

Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

Erratum: “Structure of stacking faults formed during the forward bias of 4H-SiC p-i-n diodes” [Appl. Phys. Lett. 82 , 2410 (2003)]

Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates

Extended Defects in 4H-SiC PiN Diodes

Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiC

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