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Clinical characteristics and prognostic factors of plasmablastic lymphoma patients: analysis of 135 patients from the LYSA group

Annals of oncology, 2017-04, Vol.28 (4), p.843-848

2017

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Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations

Applied physics. A, Materials science & processing, 2022-02, Vol.128 (2), Article 144

2022

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Sarcoidosis and lymphoma: a comparative study

QJM : An International Journal of Medicine, 2015-11, Vol.108 (11), p.871-878

2015

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Terahertz transmission and effective gain measurement of two-dimensional electron gas

Physica status solidi. A, Applications and materials science, 2013-07, Vol.210 (7), p.1454-1458

2013

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Comparative outcome analysis of trauma and non-trauma emergency laparotomy using a modified NELA tool format

South African Journal of Surgery, 2021-03, Vol.59 (1), p.12-19

2021

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Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

Applied physics letters, 2001-07, Vol.79 (2), p.194-196

2001

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Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

Journal of physics. D, Applied physics, 2003-01, Vol.36 (1), p.L5-L9

2003

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Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Applied physics letters, 2011-08, Vol.99 (8), p.082101-082101-3

2011

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Acquired hemophilia A associated with chronic myelomonocytic leukemia successfully treated by rituximab and azacitidine

La revue de medecine interne, 2018-08, Vol.39 (8), p.654-657

2018

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Direct observation of the core structures of threading dislocations in GaN

Applied physics letters, 1998-05, Vol.72 (21), p.2680-2682

1998

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Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

IEEE journal of quantum electronics, 2001-09, Vol.37 (9), p.1146-1152

2001

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Association of lymphoma and granulomatosis: A case series

La revue de medecine interne, 2016-07, Vol.37 (7), p.453-459

2016

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Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Journal of crystal growth, 2005-05, Vol.278 (1), p.383-386

2005

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Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.566-571

2005

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Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012094

2009

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Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Journal of applied physics, 2004-06, Vol.95 (12), p.8275-8279

2004

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Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Applied physics letters, 2000-01, Vol.76 (4), p.466-468

2000

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Nanoindentation study of Zn1−xBexSe heteroepitaxial layers

Journal of physics. D, Applied physics, 2002-11, Vol.35 (22), p.3015-3020

2002

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A closer look at burn injuries and epilepsy in a developing world burn service

South African journal of surgery, 2015-12, Vol.53 (3 and 4), p.48-50

2015

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Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

Acta physica Polonica, A, 2011-02, Vol.119 (2), p.196-198

2011

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Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers

Physica status solidi. B. Basic research, 2002-01, Vol.229 (2), p.881-885

2002

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Electrical and optical proprieties of photodiodes based on ZnSe material

Applied physics letters, 2003-07, Vol.83 (1), p.171-173

2003

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Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Applied physics letters, 2001-06, Vol.78 (26), p.4190-4192

2001

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Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Journal of applied physics, 2001-11, Vol.90 (10), p.5115-5119

2001

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Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

Acta physica Polonica, A, 2011-02, Vol.119 (2), p.107-110

2011

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Clinical characteristics and prognostic factors of plasmablastic lymphoma patients: analysis of 135 patients from the LYSA group

Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations

Sarcoidosis and lymphoma: a comparative study

Terahertz transmission and effective gain measurement of two-dimensional electron gas

Comparative outcome analysis of trauma and non-trauma emergency laparotomy using a modified NELA tool format

Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Acquired hemophilia A associated with chronic myelomonocytic leukemia successfully treated by rituximab and azacitidine

Direct observation of the core structures of threading dislocations in GaN

Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

Association of lymphoma and granulomatosis: A case series

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique

Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Nanoindentation study of Zn1−xBexSe heteroepitaxial layers

A closer look at burn injuries and epilepsy in a developing world burn service

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

Spectroscopy of Excitons, Bound Excitons and Impurities in h-ZnO Epilayers

Electrical and optical proprieties of photodiodes based on ZnSe material

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

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