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Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

Applied physics letters, 2001-07, Vol.79 (2), p.194-196

2001

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Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

Journal of physics. D, Applied physics, 2003-01, Vol.36 (1), p.L5-L9

2003

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Direct observation of the core structures of threading dislocations in GaN

Applied physics letters, 1998-05, Vol.72 (21), p.2680-2682

1998

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Voltage controlled terahertz transmission through GaN quantum wells

Applied physics letters, 2011-08, Vol.99 (8)

2011

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Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Journal of applied physics, 2004-06, Vol.95 (12), p.8275-8279

2004

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Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

IEEE journal of quantum electronics, 2001-09, Vol.37 (9), p.1146-1152

2001

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Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Journal of applied physics, 2001-11, Vol.90 (10), p.5115-5119

2001

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Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Journal of crystal growth, 2005-05, Vol.278 (1), p.383-386

2005

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Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Applied physics letters, 2000-01, Vol.76 (4), p.466-468

2000

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Electrical and optical proprieties of photodiodes based on ZnSe material

Applied physics letters, 2003-07, Vol.83 (1), p.171-173

2003

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Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.566-571

2005

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Nanoindentation study of Zn1−xBexSe heteroepitaxial layers

Journal of physics. D, Applied physics, 2002-11, Vol.35 (22), p.3015-3020

2002

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Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Applied physics letters, 2001-06, Vol.78 (26), p.4190-4192

2001

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Time response analysis of ZnSe-based Schottky barrier photodetectors

Applied physics letters, 2000-10, Vol.77 (17), p.2761-2763

2000

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Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-10, Vol.552 (1), p.82-87