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Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations

Applied physics. A, Materials science & processing, 2022-02, Vol.128 (2), Article 144

2022

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Terahertz transmission and effective gain measurement of two-dimensional electron gas

Physica status solidi. A, Applications and materials science, 2013-07, Vol.210 (7), p.1454-1458

2013

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Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

Journal of physics. D, Applied physics, 2003-01, Vol.36 (1), p.L5-L9

2003

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Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

Applied physics letters, 2001-07, Vol.79 (2), p.194-196

2001

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Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Applied physics letters, 2011-08, Vol.99 (8), p.082101-082101-3

2011

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Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

IEEE journal of quantum electronics, 2001-09, Vol.37 (9), p.1146-1152

2001

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Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Journal of crystal growth, 2005-05, Vol.278 (1), p.383-386

2005

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Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.566-571

2005

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Direct observation of the core structures of threading dislocations in GaN

Applied physics letters, 1998-05, Vol.72 (21), p.2680-2682

1998

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Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012094

2009

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Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Applied physics letters, 2000-01, Vol.76 (4), p.466-468

2000

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Nanoindentation study of Zn1−xBexSe heteroepitaxial layers

Journal of physics. D, Applied physics, 2002-11, Vol.35 (22), p.3015-3020

2002

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Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

Acta physica Polonica, A, 2011-02, Vol.119 (2), p.196-198

2011

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Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Journal of applied physics, 2004-06, Vol.95 (12), p.8275-8279

2004

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Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Applied physics letters, 2001-06, Vol.78 (26), p.4190-4192

2001

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Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Journal of applied physics, 2001-11, Vol.90 (10), p.5115-5119

2001

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Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

Acta physica Polonica, A, 2011-02, Vol.119 (2), p.107-110

2011

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Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Applied physics letters, 2000-01, Vol.76 (2), p.242-244

2000

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Electrical and optical proprieties of photodiodes based on ZnSe material

Applied physics letters, 2003-07, Vol.83 (1), p.171-173

2003

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p -type doping of Zn(Mg)BeSe epitaxial layers

Applied physics letters, 1999-07, Vol.75 (3), p.382-384

1999

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Zn(MgBe)Se ultraviolet photodetectors

Journal of electronic materials, 2001-06, Vol.30 (6), p.662-666

2001

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Time response analysis of ZnSe-based Schottky barrier photodetectors

Applied physics letters, 2000-10, Vol.77 (17), p.2761-2763

2000

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Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2005-10, Vol.552 (1), p.82-87

2005

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Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy

Journal of crystal growth, 2001-03, Vol.223 (4), p.461-465

2001

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High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range

Electronics letters, 2000-04, Vol.36 (9), p.826-827

2000

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Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations

Terahertz transmission and effective gain measurement of two-dimensional electron gas

Nanoindentation of Si, GaP, GaAs and ZnSe single crystals

Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates

Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique

Direct observation of the core structures of threading dislocations in GaN

Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells

Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Nanoindentation study of Zn1−xBexSe heteroepitaxial layers

Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to 15 K

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells

Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range

Electrical and optical proprieties of photodiodes based on ZnSe material

p -type doping of Zn(Mg)BeSe epitaxial layers

Zn(MgBe)Se ultraviolet photodetectors

Time response analysis of ZnSe-based Schottky barrier photodetectors

Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy

High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range

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