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On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Journal of applied physics, 2012-08, Vol.112 (4), p.044102

2012

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Molecular basis of agonism and antagonism in the oestrogen receptor

Nature (London), 1997-10, Vol.389 (6652), p.753-758

1997

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Morphological studies of Si nanowires effect on the photovoltaic s

Experimental and Theoretical NANOTECHNOLOGY, 2022-01, p.53-60

2022

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Influence of interlayer properties on the characteristics of high-k gate stacks

Solid-state electronics, 2012-09, Vol.75, p.63-68

2012

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A model for internal photoemission at high- k oxide/silicon energy barriers

Journal of applied physics, 2012-09, Vol.112 (6)

Engström, O.

2012

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Designing interactions by control of protein-ligand complex conformation: tuning arginine-arene interaction geometry for enhanced electrostatic protein-ligand interactions

Chemical science (Cambridge), 2018, Vol.9 (4), p.1014-1021

2018

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Compensation effects at electron traps in semiconductors

Monatshefte für Chemie, 2013, Vol.144 (1), p.73-82

Engstrom, O.

2013

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Navigation aids in the search for future high- k dielectrics: Physical and electrical trends

Solid-state electronics, 2007-04, Vol.51 (4), p.622-626

2007

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Delayed, Unprovoked, Hemodynamic Collapse with Following Asystole in a Pediatric Patient Following a High-Voltage Injury: A Case Report and Literature Review

Pediatric cardiology, 2022-06, Vol.43 (5), p.1163-1168

2022

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Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Journal of applied physics, 2009-09, Vol.106 (5), p.054510-054510-11

2009

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Structure of the ligand-binding domain of oestrogen receptor beta in the presence of a partial agonist and a full antagonist

The EMBO journal, 1999-09, Vol.18 (17), p.4608-4618

1999

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Electron States in MOS Systems

ECS transactions, 2011, Vol.35 (4), p.19-38

Engström, Olof

2011

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Electron tunneling from quantum dots characterized by deep level transient spectroscopy

Applied physics letters, 2007-09, Vol.91 (13), p.133117-133117-3

2007

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Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

Journal of electronic materials, 2010-06, Vol.39 (6), p.766-772

2010

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Charge carrier traffic at self-assembled Ge quantum dots on Si

Solid-state electronics, 2013-05, Vol.83, p.99-106

2013

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The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Applied physics letters, 2009-05, Vol.94 (21), p.213507-213507-3

2009

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Extracting the relative dielectric constant for “high- κ layers” from CV measurements – Errors and error propagation

Microelectronics and reliability, 2007-04, Vol.47 (4), p.678-681

2007

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Three dimensional mapping of thermal and tunneling electron emission from InAs∕GaAs quantum dots

Applied physics letters, 2007-07, Vol.91 (3)

2007

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Caffeine and Sugars Interact in Aqueous Solutions: A Simulation and NMR Study

The journal of physical chemistry. B, 2012-09, Vol.116 (38), p.11701-11711

2012

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A Model for Electrical Conduction Mechanism in the Pre-Breakdown Region of Disordered Structures

January 16, 2021, Vol.9, Number 1, p.417-422

2021

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Deep Level Transient Spectroscopy in Quantum Dot Characterization

Nanoscale research letters, 2008-05, Vol.3 (5), p.179-185, Article 179

2008

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Schottky barriers on silicon nanowires influenced by charge configuration

Journal of applied physics, 2008-09, Vol.104 (5), p.054515-054515-7

2008

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Discovery of classes among deep level centers in gallium arsenide

Materials science & engineering. B, Solid-state materials for advanced technology, 2007-03, Vol.138 (1), p.12-15

2007

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Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Journal of applied physics, 2008-05, Vol.103 (10), p.Art. no. 104101

2008

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Schottky barrier modulation on silicon nanowires

Applied physics letters, 2007-03, Vol.90 (13), p.132107-132107-3

2007

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On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Molecular basis of agonism and antagonism in the oestrogen receptor

Morphological studies of Si nanowires effect on the photovoltaic s

Influence of interlayer properties on the characteristics of high-k gate stacks

A model for internal photoemission at high- k oxide/silicon energy barriers

Designing interactions by control of protein-ligand complex conformation: tuning arginine-arene interaction geometry for enhanced electrostatic protein-ligand interactions

Compensation effects at electron traps in semiconductors

Navigation aids in the search for future high- k dielectrics: Physical and electrical trends

Delayed, Unprovoked, Hemodynamic Collapse with Following Asystole in a Pediatric Patient Following a High-Voltage Injury: A Case Report and Literature Review

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

Structure of the ligand-binding domain of oestrogen receptor beta in the presence of a partial agonist and a full antagonist

Electron States in MOS Systems

Electron tunneling from quantum dots characterized by deep level transient spectroscopy

Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

Charge carrier traffic at self-assembled Ge quantum dots on Si

The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces

Extracting the relative dielectric constant for “high- κ layers” from CV measurements – Errors and error propagation

Three dimensional mapping of thermal and tunneling electron emission from InAs∕GaAs quantum dots

Caffeine and Sugars Interact in Aqueous Solutions: A Simulation and NMR Study

A Model for Electrical Conduction Mechanism in the Pre-Breakdown Region of Disordered Structures

Deep Level Transient Spectroscopy in Quantum Dot Characterization

Schottky barriers on silicon nanowires influenced by charge configuration

Discovery of classes among deep level centers in gallium arsenide

Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy

Schottky barrier modulation on silicon nanowires

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