UB Paderborn / Katalog / Suche / in CDI

P119 Suivi et éducation des patients diabétiques de type 2 dans un centre de santé : première démarche d’évaluation des pratiques professionnelles

Diabetes & metabolism, 2008, Vol.34, p.H76-H76

2008

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Dislocation mediated surface morphology of GaN

Journal of applied physics, 1999-05, Vol.85 (9), p.6470-6476

1999

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Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2000-10, Vol.77 (18), p.2885-2887

2000

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Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Journal of applied physics, 1999-10, Vol.86 (8), p.4520-4526

1999

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Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

Journal of applied physics, 2002-06, Vol.91 (12), p.9821-9826

2002

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Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

Journal of applied physics, 2000-06, Vol.87 (11), p.7981-7987

2000

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Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

Applied physics letters, 1998-02, Vol.72 (6), p.692-694

1998

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Trois petits tours (d’audit) et puis s’en vont… améliorer la méthode pour « combler le fossé » entre la prise en charge individuelle et les données épidémiologiques

Revue d'épidémiologie et de santé publique, 2009-05, Vol.57, p.S42-S42

2009

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Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling

Applied physics letters, 2002-05, Vol.80 (19), p.3551-3553

2002

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High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 1999-06, Vol.74 (23), p.3528-3530

1999

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Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy

Applied physics letters, 2000-11, Vol.77 (20), p.3167-3169

2000

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Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

Applied physics letters, 2000-12, Vol.77 (24), p.3998-4000

2000

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Characterization of an AlGaN/GaN two-dimensional electron gas structure

Journal of applied physics, 2000-01, Vol.87 (1), p.369-374

2000

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Fermi edge singularity observed in GaN/AlGaN heterointerfaces

Applied physics letters, 2009-06, Vol.94 (22), p.223502-223502-3

2009

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Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2001-12, Vol.233 (4), p.709-716

2001

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Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

Applied physics letters, 2001-10, Vol.79 (17), p.2749-2751

2001

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Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.199-202

2001

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Study of deleterious aging effects in GaN/AlGaN heterostructures

Journal of applied physics, 2003-01, Vol.93 (2), p.1079-1082

2003

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Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure

Journal of applied physics, 2000-12, Vol.88 (11), p.6583-6588

2000

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Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2001-11, Vol.40 (11R), p.6235-6238

2001

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An Avrami analysis of the effects of serum and human albumin on calcium hydroxyapatite crystal growth

Biochemical journal, 1993-04, Vol.291 ( Pt 1) (1), p.326-328

1993

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Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2000-01, Vol.39 (10B), p.L1023-L1025

2000

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Polarization effects and transport in AlGaN/GaN system

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-07, Vol.18 (4), p.2322-2327

2000

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Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization

MRS proceedings, 2000, Vol.622, Article T2.5.1

2000

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Electrical transport of an AlGaN/GaN two-dimensional electron gas

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.619-625

2000

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P119 Suivi et éducation des patients diabétiques de type 2 dans un centre de santé : première démarche d’évaluation des pratiques professionnelles

Dislocation mediated surface morphology of GaN

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies

Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

Trois petits tours (d’audit) et puis s’en vont… améliorer la méthode pour « combler le fossé » entre la prise en charge individuelle et les données épidémiologiques

Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling

High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

Characterization of an AlGaN/GaN two-dimensional electron gas structure

Fermi edge singularity observed in GaN/AlGaN heterointerfaces

Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

Temperature Dependent Photoluminescence of MBE Grown Gallium Nitride Quantum Dots

Study of deleterious aging effects in GaN/AlGaN heterostructures

Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure

Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy

An Avrami analysis of the effects of serum and human albumin on calcium hydroxyapatite crystal growth

Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy

Polarization effects and transport in AlGaN/GaN system

Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization

Electrical transport of an AlGaN/GaN two-dimensional electron gas

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