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Strain-balanced InGaN/GaN multiple quantum wells

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Room temperature ferromagnetic properties of (Ga, Mn)N

Applied physics letters, 2001-11, Vol.79 (21), p.3473-3475

2001

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Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Optics letters, 2014-03, Vol.39 (6), p.1501

2014

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Observing relaxation in device quality InGaN templates by TEM techniques

Applied physics letters, 2020-03, Vol.116 (10)

2020

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Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Semiconductor science and technology, 2022-07, Vol.37 (7), p.75003

2022

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Phase separation in InGaN grown by metalorganic chemical vapor deposition

Applied physics letters, 1998-01, Vol.72 (1), p.40-42

1998

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Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

Journal of crystal growth, 2019-08, Vol.520, p.18-26

2019

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Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Journal of crystal growth, 2013-03, Vol.367, p.88-93

2013

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Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Applied physics letters, 2017-08, Vol.111 (8)

2017

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Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2354-2356

2011

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Determination of the critical layer thickness in the InGaN/GaN heterostructures

Applied physics letters, 1999-11, Vol.75 (18), p.2776-2778

1999

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Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

Applied physics letters, 1999-10, Vol.75 (15), p.2202-2204

1999

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Overgrowth of GaN on GaN nanowires produced by mask-less etching

Journal of crystal growth, 2012-08, Vol.352 (1), p.203-208

2012

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Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied physics letters, 2000-12, Vol.77 (25), p.4121-4123

2000

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Optical band gap dependence on composition and thickness of InxGa1−xN (0<x<0.25) grown on GaN

Applied physics letters, 1999-10, Vol.75 (17), p.2566-2568

1999

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Dependence of ferromagnetic properties on carrier transfer at GaMnN∕GaN:Mg interface

Applied physics letters, 2004-10, Vol.85 (17), p.3809-3811

2004

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A new approach for Multi junction solar cells from off the shelf individual cells: GaAs/Si

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, p.0994-0997

2019

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Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

Applied physics letters, 2013-08, Vol.103 (7)

2013

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Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

Applied physics letters, 2009-03, Vol.94 (13), p.132505-132505-3

2009

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Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Materials letters, 2001-12, Vol.51 (6), p.500-503

2001

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Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

Applied physics letters, 2000-04, Vol.76 (14), p.1935-1937

2000

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Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

Journal of crystal growth, 2011-05, Vol.322 (1), p.27-32

2011

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Magnetic properties of Mn-doped GaN and p-i-n junctions

Physica status solidi. C, 2005-05, Vol.2 (7), p.2403-2406

2005

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Correlation between photoluminescence and magnetic properties of GaMnN films

Applied physics letters, 2007-12, Vol.91 (24)

2007

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Strain-balanced InGaN/GaN multiple quantum wells

Room temperature ferromagnetic properties of (Ga, Mn)N

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires

Observing relaxation in device quality InGaN templates by TEM techniques

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Phase separation in InGaN grown by metalorganic chemical vapor deposition

Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Electric field control of ferromagnetism at room temperature in GaCrN (p-i-n) device structures

Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates

Determination of the critical layer thickness in the InGaN/GaN heterostructures

Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Optical band gap dependence on composition and thickness of InxGa1−xN (0<x<0.25) grown on GaN

Dependence of ferromagnetic properties on carrier transfer at GaMnN∕GaN:Mg interface

A new approach for Multi junction solar cells from off the shelf individual cells: GaAs/Si

Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures

Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

Magnetic properties of Mn-doped GaN and p-i-n junctions

Correlation between photoluminescence and magnetic properties of GaMnN films

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