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Growth and characterization of In Ga1−N (0 < x < 0.16) templates for controlled emissions from MQW

Journal of crystal growth, 2019-08, Vol.520, p.18-26

2019

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Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

Journal of crystal growth, 2019-08, Vol.520, p.18-26

2019

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Growth and Characterization of High-Quality, Relaxed InyGa1−yN Templates for Optoelectronic Applications

Journal of electronic materials, 2015-11, Vol.44 (11), p.4161-4166

2015

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Growth and Characterization of High-Quality, Relaxed In y Ga1−y N Templates for Optoelectronic Applications

Journal of electronic materials, 2015-11, Vol.44 (11), p.4161-4166

2015

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Growth and characterization of In-based nitride compounds

Journal of crystal growth, 1997-06, Vol.178 (1), p.32-44

1997

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Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

Journal of crystal growth, 2011-05, Vol.322 (1), p.27-32

2011

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Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Journal of crystal growth, 2013-03, Vol.367, p.88-93

2013

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Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphire

Journal of crystal growth, 1998-12, Vol.195 (1), p.333-339

1998

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Overgrowth of GaN on GaN nanowires produced by mask-less etching

Journal of crystal growth, 2012-08, Vol.352 (1), p.203-208

2012

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Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

Applied surface science, 1997-03, Vol.112, p.98-101

1997

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Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Materials letters, 2001-12, Vol.51 (6), p.500-503

2001

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MBE growth and properties of GaN on GaN/SiC substrates

Solid-state electronics, 1997-02, Vol.41 (2), p.213-218

1997

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Atomic layer epitaxy of device quality AlGaAs and AlAs

Applied surface science, 1994-12, Vol.82 (1-4), p.18-22

1994

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Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

MRS proceedings, 2009, Vol.1198 (1), p.36-41, Article 1198-E07-13

2009

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Ferromagnetism and Near-infrared Luminescence in Neodymium and Erbium Doped Gallium Nitride via Diffusion

MRS proceedings, 2009, Vol.1183 (1), p.37-42, Article 1183-FF06-01

2009

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A Model for Indium Incorporation in the Growth of InGaN Films

MRS proceedings, 1996, Vol.449, Article 85

1996

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Nanometer particles in the intergranular microstructure of Fe-Nd-B permanent magnets

Materials letters, 1985-01, Vol.3 (9), p.405-408

1985

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The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (1 1 1)B GaAs

Journal of magnetism and magnetic materials, 2000-08, Vol.218 (2), p.177-181

2000

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Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

Materials letters, 2000, Vol.42 (1), p.121-129

2000

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12 - Ferromagnetic behavior in transition metal-doped III-N semiconductors

Rare Earth and Transition Metal Doping of Semiconductor Materials, 2016, p.395-433

2016

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Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.718-724

1995

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Ferromagnetic τ-MnAl epitaxially grown on (100) GaAs substrates by pulsed laser deposition

Materials letters, 1996-03, Vol.26 (4), p.227-231

1996

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Recent advances in atomic layer epitaxy devices

Applied surface science, 1994-12, Vol.82 (1-4), p.7-13

1994

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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

MRS proceedings, 1998, Vol.537, Article G3.22

1998

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UV Raman Study of A 1 (LO) and E 2 Phonons in InGaN Alloys Grown by Metal-Organic Chemical Vapor Deposition on (0001) Sapphire Substrates

MRS proceedings, 2000, Vol.639, Article G9.7

2000

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Growth and characterization of In Ga1−N (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and Characterization of High-Quality, Relaxed InyGa1−yN Templates for Optoelectronic Applications

Growth and Characterization of High-Quality, Relaxed In y Ga1−y N Templates for Optoelectronic Applications

Growth and characterization of In-based nitride compounds

Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphire

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MBE growth and properties of GaN on GaN/SiC substrates

Atomic layer epitaxy of device quality AlGaAs and AlAs

Manipulation of Room Temperature Ferromagnetic behavior of GaMnN Epilayers

Ferromagnetism and Near-infrared Luminescence in Neodymium and Erbium Doped Gallium Nitride via Diffusion

A Model for Indium Incorporation in the Growth of InGaN Films

Nanometer particles in the intergranular microstructure of Fe-Nd-B permanent magnets

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (1 1 1)B GaAs

Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition

12 - Ferromagnetic behavior in transition metal-doped III-N semiconductors

Blue and green light-emitting diode structures grown by molecular beam epitaxy on ZnSe substrates

Ferromagnetic τ-MnAl epitaxially grown on (100) GaAs substrates by pulsed laser deposition

Recent advances in atomic layer epitaxy devices

Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

UV Raman Study of A 1 (LO) and E 2 Phonons in InGaN Alloys Grown by Metal-Organic Chemical Vapor Deposition on (0001) Sapphire Substrates

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