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Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

Applied physics letters, 2022-01, Vol.120 (1)

2022

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III-nitride on silicon electrically injected microrings for nanophotonic circuits

Optics express, 2019-04, Vol.27 (8), p.11800-11808

2019

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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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Whispering-gallery mode InGaN microdisks on GaN substrates

Optics express, 2021-07, Vol.29 (14), p.21280-21289

2021

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(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

AIP advances, 2019-05, Vol.9 (5), p.055101-055101-5

2019

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Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

Applied physics letters, 2014-06, Vol.104 (24)

2014

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The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates

Journal of crystal growth, 2011-02, Vol.316 (1), p.30-36

2011

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Exciton dissociation and hole escape in the thermal photoluminescence quenching of ( Ga , In ) ( N , As ) quantum wells

Physical review. B, Condensed matter and materials physics, 2007-03, Vol.75 (11), Article 115337

2007

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Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

Scientific reports, 2016-09, Vol.6 (1), p.34191-34191, Article 34191

2016

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Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

Journal of crystal growth, 2012, Vol.338 (1), p.20-29

2012

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Long wavelength emitting InAs∕Ga0.85In0.15NxAs1−x quantum dots on GaAs substrate

Applied physics letters, 2006-06, Vol.88 (23)

2006

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Deep ultraviolet detection dynamics of AlGaN based devices

Applied physics letters, 2006-11, Vol.89 (22), p.223513-223513-3

2006

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Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.931-933

2012

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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Nanotechnology, 2020-11, Vol.31 (46), p.465706-465706

2020

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Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

Optics express, 2016-05, Vol.24 (9), p.9602-9610

2016

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A self-consistent model for quantum well infrared photodetectors

Journal of applied physics, 1996-01, Vol.79 (1), p.446-454

1996

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Intersubband transitions in InGaNAs/GaAs quantum wells

Applied physics letters, 2002-09, Vol.81 (10), p.1836-1838

2002

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Tunnel current in quantum dot infrared photodetectors

Journal of applied physics, 2003-01, Vol.93 (2), p.1320-1322

2003

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Multilayer (Al,Ga)N structures for solar-blind detection

IEEE journal of selected topics in quantum electronics, 2004-07, Vol.10 (4), p.752-758

2004

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UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range

Semiconductor science and technology, 2018-06, Vol.33 (7)

2018

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Dynamics of AlGaN based detectors in the deep-UV

Solid-state electronics, 2008-05, Vol.52 (5), p.795-800

2008

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High quality factor AlN nanocavities embedded in a photonic crystal waveguide

Applied physics letters, 2012-05, Vol.100 (19), p.191104-191104-3

2012

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Mechanisms of recombination in GaN photodetectors

Applied physics letters, 1996-08, Vol.69 (9), p.1202-1204

1996

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Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

Journal of physics. D, Applied physics, 2008-08, Vol.41 (15), p.155102-155102 (4)

2008

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Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Whispering-gallery mode InGaN microdisks on GaN substrates

(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates

Exciton dissociation and hole escape in the thermal photoluminescence quenching of ( Ga , In ) ( N , As ) quantum wells

Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks

Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

Long wavelength emitting InAs∕Ga0.85In0.15NxAs1−x quantum dots on GaAs substrate

Deep ultraviolet detection dynamics of AlGaN based devices

Current transport through an n-doped, nearly lattice matched GaN/AlInN/GaN heterostructure

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators

A self-consistent model for quantum well infrared photodetectors

Intersubband transitions in InGaNAs/GaAs quantum wells

Tunnel current in quantum dot infrared photodetectors

Multilayer (Al,Ga)N structures for solar-blind detection

UVA and UVB light emitting diodes with AlyGa1−yN quantum dot active regions covering the 305-335 nm range

Dynamics of AlGaN based detectors in the deep-UV

High quality factor AlN nanocavities embedded in a photonic crystal waveguide

Mechanisms of recombination in GaN photodetectors

Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

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