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AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs

Electronics letters, 1995-01, Vol.31 (1), p.68-69

1995

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Development of a GaAs monolithic surface acoustic wave integrated circuit

IEEE journal of solid-state circuits, 1999-09, Vol.34 (9), p.1254-1258

1999

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Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

IEEE journal of solid-state circuits, 2000-08, Vol.35 (8), p.1253

2000

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Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

IEEE journal of solid-state circuits, 2000-08, Vol.35 (8), p.1253-1253

2000

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Current-Voltage and capacitance-Voltage characteristics of modulation-doped field-effect transistors

IEEE transactions on electron devices, 1983-03, Vol.30 (3), p.207-212

1983

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Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

Proceedings of the IEEE, 1986, Vol.74 (6), p.773-822

1986

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Digital alloy AlAsSb/AlGaAsSb distributed Bragg reflectors lattice matched to InP for 1.3 – 1.55 µm wavelength range

Electronics letters, 1995-07, Vol.31 (15), p.1247-1248

1995

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Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiC

Journal of applied physics, 1991-06, Vol.69 (12), p.8423-8425

1991

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On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

IEEE transactions on electron devices, 1984-08, Vol.31 (8), p.1028-1032

1984

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Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization

IEEE transactions on electron devices, 1984-01, Vol.31 (1), p.29-35

1984

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Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

Applied physics letters, 1998-07, Vol.73 (2), p.229-231

1998

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Strained-quantum-well, modulation-doped, field-effect transistor

Electronics letters, 1985-01, Vol.21 (18), p.823-824

1985

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Selective oxidation of buried AlGaAs versus AlAs layers

Applied physics letters, 1996-09, Vol.69 (10), p.1385-1387

1996

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Schottky barriers and ohmic contacts on n-type InP based compound semiconductors for microwave FET's

IEEE transactions on electron devices, 1981-01, Vol.28 (1), p.1-5

1981

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Magneto-optic determination of the light-hole effective masses in InGaAs/GaAs strained-layer superlattices

Solid state communications, 1985-01, Vol.55 (6), p.525-527

1985

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Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

Applied physics letters, 1997-05, Vol.70 (20), p.2711-2713

1997

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Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K

Electronics letters, 1983-01, Vol.19 (19), p.789-791

1983

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Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy

Applied physics letters, 1997-11, Vol.71 (20), p.2931-2933

1997

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Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e

Electronics letters, 1980-01, Vol.16 (19), p.753

1980

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Incorporation of Sb in GaAs1−xSbx (x<0.15) by molecular beam epitaxy

Electronics letters, 1983-01, Vol.19 (12), p.453

1983

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High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctions

Electronics letters, 1981, Vol.17 (3), p.126

1981

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Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

Applied physics letters, 1995-01, Vol.66 (3), p.329-331

1995

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Properties of silicon-doped AlxGa1-xAs grown by molecular beam epitaxy

Thin solid films, 1983-01, Vol.99 (4), p.391-397

1983

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Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)

Electronics letters, 1983, Vol.19 (23), p.986

1983

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Light sensitivity of Al0.25Ga0.75As/GaAs modulation-doped structures grown by molecular beam epitaxy: effect of substrate temperature

Electronics letters, 1983-01, Vol.19 (6), p.200

1983

Volltextzugriff (PDF)

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AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs

Development of a GaAs monolithic surface acoustic wave integrated circuit

Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

Addition to "Development of a GaAs monolithic surface acoustic wave integrated circuit"

Current-Voltage and capacitance-Voltage characteristics of modulation-doped field-effect transistors

Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

Digital alloy AlAsSb/AlGaAsSb distributed Bragg reflectors lattice matched to InP for 1.3 – 1.55 µm wavelength range

Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiC

On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures

Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization

Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system

Strained-quantum-well, modulation-doped, field-effect transistor

Selective oxidation of buried AlGaAs versus AlAs layers

Schottky barriers and ohmic contacts on n-type InP based compound semiconductors for microwave FET's

Magneto-optic determination of the light-hole effective masses in InGaAs/GaAs strained-layer superlattices

Anisotropy of the nitrogen conduction states in the group III nitrides studied by polarized x-ray absorption

Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K

Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy

Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e

Incorporation of Sb in GaAs1−xSbx (x<0.15) by molecular beam epitaxy

High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctions

Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates

Properties of silicon-doped AlxGa1-xAs grown by molecular beam epitaxy

Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)

Light sensitivity of Al0.25Ga0.75As/GaAs modulation-doped structures grown by molecular beam epitaxy: effect of substrate temperature

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