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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Demonstration of a MOT in a sub-millimeter membrane hole

Scientific reports, 2021-04, Vol.11 (1), p.8807-8807, Article 8807

2021

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High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD04

2019

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.473-477

2019

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Ultra-wide band gap AlGaN polarization-doped field effect transistor

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.74103

2018

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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Degradation Mechanisms for GaN and GaAs High Speed Transistors

Materials, 2012-12, Vol.5 (12), p.2498-2520

2012

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Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

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Al-rich AlGaN based transistors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates

IEEE electron device letters, 2019-01, Vol.40 (1), p.17-20

2019

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IEEE_Xplore

Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-03, Vol.37 (2)

2019

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Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Journal of applied physics, 2021-07, Vol.130 (4)

2021

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Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Applied physics letters, 2019-03, Vol.114 (11)

2019

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Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-03, Vol.35 (2)

2017

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Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

Journal of electronic materials, 2019-09, Vol.48 (9), p.5581-5585

2019

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AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Applied physics letters, 2019-02, Vol.114 (5)

2019

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Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

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Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-05, Vol.36 (3)

2018

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Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Journal of applied physics, 2018-03, Vol.123 (11), p.114502

2018

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Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-01, Vol.38 (2)

2020

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CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2)

2019

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High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-04, Vol.38 (3)

2020

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Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment

Applied physics letters, 2019-03, Vol.114 (11)

2019

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High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-05, Vol.38 (3)

2020

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Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-07, Vol.33 (4)

2015

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Demonstration of a MOT in a sub-millimeter membrane hole

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

Ultra-wide band gap AlGaN polarization-doped field effect transistor

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors

Al-rich AlGaN based transistors

RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates

Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN

Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors

AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Reactive sputter deposition of piezoelectric Sc0.12Al0.88N for contour mode resonators

Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Enhancement-mode Al 0.85 Ga 0.15 N/Al 0.7 Ga 0.3 N high electron mobility transistor with fluorine treatment

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

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