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A comparative study on subjective feeling of engine acceleration sound by automobile types

International journal of industrial ergonomics, 2019-11, Vol.74, p.102843, Article 102843

2019

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Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2960-2967

2008

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Understanding Balance Control in the Context of Riding a Personal Mobility Device

Applied sciences, 2021-05, Vol.11 (9), p.4173

2021

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A Study on Affective Dimensions to Engine Acceleration Sound Quality Using Acoustic Parameters

Applied sciences, 2019-02, Vol.9 (3), p.604

2019

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Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2317-2325

2011

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Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

IEEE electron device letters, 2009-01, Vol.30 (1), p.57-60

2009

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Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.481-487

2006

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Effects of Autonomous Driving Context and Anthropomorphism of in-Vehicle Voice Agents on Intimacy, Trust, and Intention to Use

International journal of human-computer interaction, 2023-10, p.1-14

2023

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The effect of wearing a head-mounted display on the boundaries of the cervical range of motion based on perceived comfort in a static posture

Virtual reality : the journal of the Virtual Reality Society, 2023-06, Vol.27 (2), p.815-828

2023

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Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics

Applied physics letters, 2009-02, Vol.94 (8), p.083503-083503-3

2009

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Personal Mobility Device and User Experience: A State-of-the-art Literature Review

Proceedings of the Human Factors and Ergonomics Society Annual Meeting, 2018-09, Vol.62 (1), p.1336-1337

2018

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Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

IEEE electron device letters, 2009-05, Vol.30 (5), p.559-561

2009

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Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3442-3450

2010

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A 31 ns Random Cycle VCAT-Based 4F ^ DRAM With Manufacturability and Enhanced Cell Efficiency

IEEE journal of solid-state circuits, 2010-04, Vol.45 (4), p.880-888

2010

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Body Thickness Dependence of Impact Ionization in a Multiple-Gate FinFET

IEEE electron device letters, 2007-07, Vol.28 (7), p.625-627

2007

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Data retention characteristics of sub-100 nm NAND flash memory cells

IEEE electron device letters, 2003-12, Vol.24 (12), p.748-750

2003

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High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer

IEEE transactions on nanotechnology, 2008-03, Vol.7 (2), p.181-184

2008

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3 Dimensional GAA Transitors : twin silicon nanowire MOSFET and multi-bridge-channel MOSFET

2006 IEEE international SOI Conferencee Proceedings, 2006, p.131-134

Donggun Park

2006

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A study of negative-bias temperature instability of SOI and body-tied FinFETs

IEEE electron device letters, 2005-05, Vol.26 (5), p.326-328

2005

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Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs)

IEEE electron device letters, 2007-12, Vol.28 (12), p.1129-1131

2007

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Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach

Applied physics letters, 2008-08, Vol.93 (8)

2008

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A novel multibridge-channel MOSFET (MBCFET): fabrication technologies and characteristics

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.253-257

2003

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Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

IEEE electron device letters, 2008-03, Vol.29 (3), p.242-245

2008

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The future outlook of memory devices

ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007, p.47-47

2007

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The future outlook of memory devices

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, 2007, p.47-47

2007

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A comparative study on subjective feeling of engine acceleration sound by automobile types

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Understanding Balance Control in the Context of Riding a Personal Mobility Device

A Study on Affective Dimensions to Engine Acceleration Sound Quality Using Acoustic Parameters

Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)

Effects of Autonomous Driving Context and Anthropomorphism of in-Vehicle Voice Agents on Intimacy, Trust, and Intention to Use

The effect of wearing a head-mounted display on the boundaries of the cervical range of motion based on perceived comfort in a static posture

Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics

Personal Mobility Device and User Experience: A State-of-the-art Literature Review

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging

A 31 ns Random Cycle VCAT-Based 4F ^ DRAM With Manufacturability and Enhanced Cell Efficiency

Body Thickness Dependence of Impact Ionization in a Multiple-Gate FinFET

Data retention characteristics of sub-100 nm NAND flash memory cells

High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer

3 Dimensional GAA Transitors : twin silicon nanowire MOSFET and multi-bridge-channel MOSFET

A study of negative-bias temperature instability of SOI and body-tied FinFETs

Temperature-Dependent Characteristics of Cylindrical Gate-All-Around Twin Silicon Nanowire MOSFETs (TSNWFETs)

Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach

A novel multibridge-channel MOSFET (MBCFET): fabrication technologies and characteristics

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

The future outlook of memory devices

The future outlook of memory devices

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