UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 35

Sortiert nach

Influence of substrate temperature on incorporation of magnesium into Zn^sub 1-x^Mg^sub x^O layers growth by molecular beam epitaxy

Journal of alloys and compounds, 2018-10, Vol.766, p.398

2018

Volltextzugriff (PDF)

Effect of rapid thermal annealing on damage of silicon matrix implanted by low-energy rhenium ions

Journal of alloys and compounds, 2020-12, Vol.846, p.156433, Article 156433

2020

Volltextzugriff (PDF)

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.80-85

2016

Volltextzugriff (PDF)

Influence of defects on the lattice constant of GaMnAs

Physical review. B, Condensed matter and materials physics, 2004-02, Vol.69 (7), Article 075206

2004

Volltextzugriff (PDF)

Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Progress in crystal growth and characterization of materials, 2018-09, Vol.64 (3), p.1

2018

Volltextzugriff (PDF)

Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T C

Applied physics letters, 2005, Vol.86 (11), p.112501-112501-3

2005

Volltextzugriff (PDF)

Monocrystalline ZnO Films on GaN/Al2O3 by Atomic Layer Epitaxy in Gas Flow

Chemistry of materials, 2004-04, Vol.16 (8), p.1447-1450

2004

Volltextzugriff (PDF)

Effect of Mn interstitials on the lattice parameter of Ga1−xMnxAs

Journal of applied physics, 2004-01, Vol.95 (2), p.603-608

2004

Volltextzugriff (PDF)

Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

Applied physics letters, 2005-12, Vol.87 (26)

2005

Volltextzugriff (PDF)

Crystal Defects and Strain of Epitaxial InP Layers Laterally Overgrown on Si

Crystal growth & design, 2006-05, Vol.6 (5), p.1096-1100

2006

Volltextzugriff (PDF)

Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

Applied physics letters, 2001-05, Vol.78 (21), p.3271-3273

2001

Volltextzugriff (PDF)

Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-05, Vol.18 (3), p.1697-1700

2000

Volltextzugriff (PDF)

Thermal expansion of bulk and homoepitaxial GaN

Applied physics letters, 2000-09, Vol.77 (10), p.1434-1436

2000

Volltextzugriff (PDF)

“Contactless” growth of uniform Cd0.8Zn0.2Te monocrystals from the vapour

Materials letters, 2004-04, Vol.58 (11), p.1781-1783

2004

Volltextzugriff (PDF)

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Journal of electronic materials, 2001-04, Vol.30 (4), p.439-444

2001

Volltextzugriff (PDF)

Pressure-induced defect structure changes in thin AlGaAs layers

Journal of alloys and compounds, 2004-01, Vol.362 (1), p.254-260

2004

Volltextzugriff (PDF)

Strain and defect structure of iron implanted In0.53Ga0.47As using high-resolution X-ray diffraction

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-10, Vol.239 (4), p.414-418

2005

Volltextzugriff (PDF)

Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

Journal of alloys and compounds, 2004-01, Vol.362 (1), p.275-281

2004

Volltextzugriff (PDF)

Pressure distribution in a large-anvil pressure cell

Journal of alloys and compounds, 2004-01, Vol.362 (1), p.96-98

2004

Volltextzugriff (PDF)

Low-temperature thermal expansion of Mg3N2

Journal of alloys and compounds, 2001-10, Vol.328 (1-2), p.272-275

2001

Volltextzugriff (PDF)

X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates

Journal of crystal growth, 2002-11, Vol.245 (1), p.37-49

2002

Volltextzugriff (PDF)

High-pressure structural and optical properties of wurtzite-type Zn1−xMgxSe

Journal of alloys and compounds, 2004-05, Vol.371 (1-2), p.168-171

2004

Volltextzugriff (PDF)

Structural properties of MBE grown GaMnAs layers

Thin solid films, 2000-05, Vol.367 (1-2), p.165-167

2000

Volltextzugriff (PDF)

Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

Physica. B, Condensed matter, 2001-12, Vol.308, p.820-822

2001

Volltextzugriff (PDF)

An X-ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

Physica status solidi. C, 2005-01, Vol.2 (4), p.1298-1303

2005

Volltextzugriff (PDF)

1 – 25 von 35

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(35)
Mit Volltextzugriff
(35)

Publikationsform

Artikel
(35)

Sprache

Englisch
(35)
Japanisch
(8)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Influence of substrate temperature on incorporation of magnesium into Zn^sub 1-x^Mg^sub x^O layers growth by molecular beam epitaxy

Effect of rapid thermal annealing on damage of silicon matrix implanted by low-energy rhenium ions

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Influence of defects on the lattice constant of GaMnAs

Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T C

Monocrystalline ZnO Films on GaN/Al2O3 by Atomic Layer Epitaxy in Gas Flow

Effect of Mn interstitials on the lattice parameter of Ga1−xMnxAs

Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping

Crystal Defects and Strain of Epitaxial InP Layers Laterally Overgrown on Si

Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs(100) substrates

Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers

Thermal expansion of bulk and homoepitaxial GaN

“Contactless” growth of uniform Cd0.8Zn0.2Te monocrystals from the vapour

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Pressure-induced defect structure changes in thin AlGaAs layers

Strain and defect structure of iron implanted In0.53Ga0.47As using high-resolution X-ray diffraction

Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

Pressure distribution in a large-anvil pressure cell

Low-temperature thermal expansion of Mg3N2

X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates

High-pressure structural and optical properties of wurtzite-type Zn1−xMgxSe

Structural properties of MBE grown GaMnAs layers

Stress-induced transformation of defects in homoepitaxial beryllium-doped GaAs thin films

An X-ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

Suchergebnisse filtern