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The molecular beam epitaxial growth and characterization of inversion channel structures for optoelectronic integration
1993
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In zAl 1−zAs/In yGa 1−yAs lattice constant engineered HEMTs on GaAs
Solid-state electronics, 1997, Vol.41 (10), p.1629-1634
1997
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InzAl1−zAs/InyGa1−yAs lattice constant engineered HEMTs on GaAs
Solid-state electronics, 1997-10, Vol.41 (10), p.1629-1634
1997
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Design and measurement of an MQW nipi waveguide modulator for optoelectronic integrated circuits
IEEE journal of quantum electronics, 1996-06, Vol.32 (6), p.1029-1037
1996
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Electrical and optical switching characteristics of the single-quantum-well DOES laser
IEEE transactions on electron devices, 1992-11, Vol.39 (11), p.2523-2528
1992
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High-performance AlGaAs/InGaAs/GaAs PHEMTs for K and Ka-band applications
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282), 1999, Vol.2, p.681-684 vol.2
1999
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Integrated inversion channel optoelectronic devices and circuit elements for multifunctional array applications
IEEE journal of quantum electronics, 1993-02, Vol.29 (2), p.785-800
1993
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A high-efficiency vertical-cavity surface-emitting switching laser fabricated with post-growth cavity mode positioning
IEEE photonics technology letters, 1993-06, Vol.5 (6), p.634-636, Article 634
1993
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New results for nonstoichiometric InP grown by low temperature MBE
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.53-56
1998
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Operating characteristics of InGaAs-GaAs MQW hetero-nipi waveguide modulators
IEEE photonics technology letters, 1995-08, Vol.7 (8), p.878-880
1995
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Lasing oscillations in the negative differential resistance region of the double-heterostructure optoelectronic switch
IEEE photonics technology letters, 1993-05, Vol.5 (5), p.497-499, Article 497
1993
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A quantum-well inversion channel heterostructure as a multifunctional component for optoelectronic integrated circuits
IEEE journal of quantum electronics, 1993-01, Vol.29 (1), p.136-149
1993
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Buried channel heterojunction field-effect transistor (BCHFET)
Electronics letters, 1992-04, Vol.28 (9), p.858-860
1992
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Submicrometre gate length scaling of inversion channel heterojunction field effect transistor
Electronics letters, 1994-03, Vol.30 (6), p.529-531
1994
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Optimizing InP HBT technology for 50 GHz clock-rate MSI circuits
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 1999, p.195-198
1999
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Low noise InAlAs/InGaAs HEMTs grown by MOVPE
Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.219-222
1998
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High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHz
1996 IEEE MTT-S International Microwave Symposium Digest, 1996, Vol.2, p.693-696 vol.2
1996
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The HFEL Laser - A New Laser Structure For Opto-electranic Integration
LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting, 1990, p.499-501
1990
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A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260), 1998, p.117-120
1998
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High-efficiency GaAs-based pHEMT C-band power amplifier
IEEE microwave and guided wave letters, 1996-02, Vol.6 (2), p.91-93
1996
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Single Quantum-well Inversion Channel Device, For OEICs
LEOS '90. Conference Proceedings IEEE Lasers and Electro-Optics Society 1990 Annual Meeting, 1990, p.368-371
1990
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