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Trapping effects and microwave power performance in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.465-471

2001

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H, He, and N implant isolation of n-type GaN

Journal of applied physics, 1995-09, Vol.78 (5), p.3008-3011

1995

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Patterning of the Drosophila embryo by a homeodomain-deleted Ftz polypeptide

Nature (London), 1996-01, Vol.379 (6561), p.162-165

1996

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AlSb/InAs HEMT's for low-voltage, high-speed applications

IEEE transactions on electron devices, 1998-09, Vol.45 (9), p.1869-1875

1998

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Photoluminescence and magnetic resonance studies of Er3+ in MeV ion-implanted GaAs

Applied physics letters, 1991-02, Vol.58 (5), p.502-504

1991

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Implantation approach to SEU suppression in GaAs

Electronics letters, 1999-04, Vol.35 (9), p.751-752

1999

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Fabrication and characterization of GaN FETs

Solid-state electronics, 1997-10, Vol.41 (10), p.1549-1554

1997

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GaN FETs for microwave and high-temperature applications

Solid-state electronics, 1997-02, Vol.41 (2), p.177-180

1997

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High-energy Si implantation into InP:Fe

Journal of applied physics, 1991-08, Vol.70 (3), p.1750-1757

1991

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Observation of ion-implantation-damage-created n-type conductivity in InP after high-temperature annealing

Journal of applied physics, 1993-09, Vol.74 (5), p.3091-3098

1993

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GaAs vertical pin diode using MeV implantation

Electronics letters, 1991-11, Vol.27 (24), p.2265-2267

1991

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Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs

Electronics letters, 1993-01, Vol.29 (21), p.1888-1890

1993

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Time domain analysis of oxygen uptake during pseudorandom binary sequence exercise tests

Journal of applied physiology (1985), 1991-10, Vol.71 (4), p.1620

1991

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tantalus, a potential link between Notch signalling and chromatin-remodelling complexes

Development genes and evolution, 2005-05, Vol.215 (5), p.255-260

2005

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Silicon implantation into GaAs : observations of dose rate dependent electrical activation and damage

Applied physics letters, 1990-08, Vol.57 (9), p.911-913

1990

Volltextzugriff (PDF)

In0.53Ga0.47As metal-semiconductor-metal photodetector using proton bombarded p -type material

Journal of applied physics, 1991-10, Vol.70 (7), p.3943-3945

1991

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Development and characterization of zone melt growth GaAs for gamma-ray detectors

IEEE transactions on nuclear science, 1996-06, Vol.43 (3), p.1376-1380

1996

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Site transfer of Si in GaAs after heavy ion MeV implantation and annealing

Journal of applied physics, 1992-10, Vol.72 (7), p.2692-2699

1992

Volltextzugriff (PDF)

Tantalus, a Novel ASX-Interacting Protein with Tissue-Specific Functions

Developmental biology, 2001-06, Vol.234 (2), p.441-453

2001

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Dual implants in InGaAs

Journal of applied physics, 1990-10, Vol.68 (7), p.3763-3765

1990

Volltextzugriff (PDF)

MeV Be implantation in GaAs

Journal of applied physics, 1990-05, Vol.67 (10), p.6165-6170

1990

Volltextzugriff (PDF)

Implantation damage in GaAs-AlAs superlattices of different layer thickness

Applied physics letters, 1991-09, Vol.59 (11), p.1338-1340

1991

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Diamond metal-semiconductor-metal ultraviolet photodetectors

Diamond and related materials, 1993-04, Vol.2 (5), p.1020-1023

1993

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Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions

Applied physics letters, 1988-06, Vol.52 (26), p.2244-2246

1988

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Damaged-induced isolation in n-type InP by light-ion implantation

Solid-state electronics, 1983-01, Vol.26 (8), p.805-810

1983

Volltextzugriff (PDF)

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Trapping effects and microwave power performance in AlGaN/GaN HEMTs

H, He, and N implant isolation of n-type GaN

Patterning of the Drosophila embryo by a homeodomain-deleted Ftz polypeptide

AlSb/InAs HEMT's for low-voltage, high-speed applications

Photoluminescence and magnetic resonance studies of Er3+ in MeV ion-implanted GaAs

Implantation approach to SEU suppression in GaAs

Fabrication and characterization of GaN FETs

GaN FETs for microwave and high-temperature applications

High-energy Si implantation into InP:Fe

Observation of ion-implantation-damage-created n-type conductivity in InP after high-temperature annealing

GaAs vertical pin diode using MeV implantation

Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs

Time domain analysis of oxygen uptake during pseudorandom binary sequence exercise tests

tantalus, a potential link between Notch signalling and chromatin-remodelling complexes

Silicon implantation into GaAs : observations of dose rate dependent electrical activation and damage

In0.53Ga0.47As metal-semiconductor-metal photodetector using proton bombarded p -type material

Development and characterization of zone melt growth GaAs for gamma-ray detectors

Site transfer of Si in GaAs after heavy ion MeV implantation and annealing

Tantalus, a Novel ASX-Interacting Protein with Tissue-Specific Functions

Dual implants in InGaAs

MeV Be implantation in GaAs

Implantation damage in GaAs-AlAs superlattices of different layer thickness

Diamond metal-semiconductor-metal ultraviolet photodetectors

Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions

Damaged-induced isolation in n-type InP by light-ion implantation

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