UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

Physical review. B, 2018-05, Vol.97 (20), Article 205204

2018

Volltextzugriff (PDF)

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Physical review. B, Condensed matter and materials physics, 2014-12, Vol.90 (23), Article 235203

2014

Volltextzugriff (PDF)

Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors

Physical review letters, 2021-01, Vol.126 (2), p.027401-027401, Article 027401

2021

Volltextzugriff (PDF)

Native Point Defects in GaN: A Hybrid-Functional Study

Physical review applied, 2016-12, Vol.6 (6), Article 064002

2016

Volltextzugriff (PDF)

Comment on "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals"

Physical review letters, 2015-07, Vol.115 (2), p.029701-029701, Article 029701

2015

Volltextzugriff (PDF)

Yellow luminescence of gallium nitride generated by carbon defect complexes

Physical review letters, 2013-02, Vol.110 (8), p.087404-087404, Article 087404

2013

Volltextzugriff (PDF)

Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN

Journal of applied physics, 2020-04, Vol.127 (15)

2020

Volltextzugriff (PDF)

Hydrogen-carbon complexes and the blue luminescence band in GaN

Journal of applied physics, 2016-01, Vol.119 (3)

2016

Volltextzugriff (PDF)

Green luminescence in Mg-doped GaN

Physical review. B, Condensed matter and materials physics, 2014-07, Vol.90 (3), Article 035207

2014

Volltextzugriff (PDF)

Blue luminescence and Zn acceptor in GaN

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (11), Article 115204

2013

Volltextzugriff (PDF)

Photoluminescence from CdGa and HgGa acceptors in GaN

Journal of applied physics, 2024-04, Vol.135 (15)

2024

Volltextzugriff (PDF)

Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

Physical review. B, 2018-05, Vol.97 (20)

2018

Volltextzugriff (PDF)

The effect of annealing on photoluminescence from defects in ammonothermal GaN

Journal of applied physics, 2022-01, Vol.131 (3)

2022

Volltextzugriff (PDF)

Deterministic modeling of hybrid nonlinear effects in epsilon-near-zero thin films

Applied physics letters, 2022-01, Vol.120 (3)

2022

Volltextzugriff (PDF)

Thermal annealing of GaN implanted with Be

Journal of applied physics, 2022-03, Vol.131 (12)

2022

Volltextzugriff (PDF)

Lattice thermal conductivity in bulk and nanosheet NaxCoO2

Computational materials science, 2014-02, Vol.82, p.219-225

2014

Volltextzugriff (PDF)

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Journal of applied physics, 2016-03, Vol.119 (9)

2016

Volltextzugriff (PDF)

Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties

Physical review. B, 2018-05, Vol.97 (20), Article 205205

2018

Volltextzugriff (PDF)

Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2017-06, Vol.467, p.145-149

2017

Volltextzugriff (PDF)

Unusual properties of the RY3 center in GaN

Physical review. B, 2019-07, Vol.100 (4), p.045204, Article 045204

2019

Volltextzugriff (PDF)

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

Applied surface science, 2015-02, Vol.327, p.43-50

2015

Volltextzugriff (PDF)

Resonant Enhancement of Tunneling Magnetoresistance in Double-Barrier Magnetic Heterostructures

Physical review letters, 2002-08, Vol.89 (10), Article 107205

2002

Volltextzugriff (PDF)

Effect of particle-hole asymmetry on the Mott-Hubbard metal-insulator transition

Physical review letters, 2004-05, Vol.92 (21), p.216401-216401, Article 216401

2004

Volltextzugriff (PDF)

Influence of interface structure on electronic properties and Schottky barriers in Fe ∕ GaAs magnetic junctions

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (11), Article 115332

2006

Volltextzugriff (PDF)

Interactions of oxygen and hydrogen on Pd(1 1 1) surface

Surface science, 2008-07, Vol.602 (14), p.2552-2557

2008

Volltextzugriff (PDF)

1 – 25 von 184

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(157)
Mit Volltextzugriff
(129)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(92)
Physical Sciences
(70)
Physics
(61)
Physics, Applied
(36)
Technology
(32)
Materials Science
(26)
Materials Science, Multidisciplinary
(23)
Physics, Condensed Matter
(19)
Life Sciences & Biomedicine
(16)
Chemistry
(15)
Humans
(10)
Chemistry, Physical
(9)
Gallium Nitrides
(9)
Biomedical And Life Sciences
(8)
Chemistry And Materials Science
(8)
Mathematical Analysis
(8)
Photoluminescence
(8)
Animals
(7)
Epitaxial Growth
(7)
Male
(7)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors

Native Point Defects in GaN: A Hybrid-Functional Study

Comment on "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals"

Yellow luminescence of gallium nitride generated by carbon defect complexes

Koopmans’ tuning of HSE hybrid density functional for calculations of defects in semiconductors: A case study of carbon acceptor in GaN

Hydrogen-carbon complexes and the blue luminescence band in GaN

Green luminescence in Mg-doped GaN

Blue luminescence and Zn acceptor in GaN

Photoluminescence from CdGa and HgGa acceptors in GaN

Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

The effect of annealing on photoluminescence from defects in ammonothermal GaN

Deterministic modeling of hybrid nonlinear effects in epsilon-near-zero thin films

Thermal annealing of GaN implanted with Be

Lattice thermal conductivity in bulk and nanosheet NaxCoO2

Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory

Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties

Effect of oxygen-to-metal flux ratio on incorporation of metal species into quaternary BeMgZnO grown by plasma-assisted molecular beam epitaxy

Unusual properties of the RY3 center in GaN

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

Resonant Enhancement of Tunneling Magnetoresistance in Double-Barrier Magnetic Heterostructures

Effect of particle-hole asymmetry on the Mott-Hubbard metal-insulator transition

Influence of interface structure on electronic properties and Schottky barriers in Fe ∕ GaAs magnetic junctions

Interactions of oxygen and hydrogen on Pd(1 1 1) surface

Suchergebnisse filtern