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Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices

IEEE transactions on device and materials reliability, 2021-06, Vol.21 (2), p.192-198

2021

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Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme

2021 IEEE International Integrated Reliability Workshop (IIRW), 2021, p.1-4

2021

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Cumulated charging mechanisms at gate processing in high-κ first planar NMOS devices

2020 IEEE International Integrated Reliability Workshop (IIRW), 2020, p.1-4

2020

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(Invited) Electro-Thermal Characterization of SiGe HBT PA-Cells

ECS transactions, 2014, Vol.64 (6), p.295-302

2014

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Use of a Purged FOUP to Improve H-Terminated Silicon Surface Stability Prior to Epitaxial Growth

ECS transactions, 2014, Vol.64 (6), p.669-673

2014

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Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors

Solid state phenomena, 2008, Vol.134, p.379-382

2008

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Ex Situ Bubble Generation, Enhancing the Particle Removal Rate for Single Wafer Megasonic Cleaning Processes

Solid state phenomena, 2008, Vol.134, p.201-204

2008

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A 0.65-to-1.4 nJ/Burst 3-to-10 GHz UWB All-Digital TX in 90 nm CMOS for IEEE 802.15.4a

IEEE journal of solid-state circuits, 2007-12, Vol.42 (12), p.2860-2869

2007

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The Potential of FinFETs for Analog and RF Circuit Applications

IEEE transactions on circuits and systems. I, Regular papers, 2007-11, Vol.54 (11), p.2541-2551

2007

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A CMOS Ultra-Wideband Receiver for Low Data-Rate Communication

IEEE journal of solid-state circuits, 2007-11, Vol.42 (11), p.2515-2527

2007

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A fast start-up 3GHz-10GHz digitally controlled oscillator for UWB impulse radio in 90nm CMOS

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, 2007, p.484-487

2007

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A 0.65-to-1.4nJ/burst 3-to-10GHz UWB Digital TX in 90nm CMOS for IEEE 802.15.4a

2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 2007, p.120-591

2007

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Analog-Digital Partitioning for Low-Power UWB Impulse Radios under CMOS Scaling

EURASIP journal on wireless communications and networking, 2007-01, Vol.2006 (1), p.072430-072430

2007

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Analog and RF circuits in 45 nm CMOS and below: planar bulk versus FinFET

2006 Proceedings of the 32nd European Solid-State Circuits Conference, 2006, p.54-57

2006

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Analog-Digital Partitioning for Low-Power UWB Impulse Radios under CMOS Scaling

EURASIP journal on wireless communications and networking, 2006-01, Vol.2006 (1), p.072430, Article 072430

2006

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Analog and RF circuits in 45 nm CMOS and below: planar bulk versus FinFET

2006 European Solid-State Device Research Conference, 2006, p.53-56

2006

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Ultra-wide-band transmitter for low-power wireless body area networks: design and evaluation

IEEE transactions on circuits and systems. 1, Fundamental theory and applications, 2005-12, Vol.52 (12), p.2515-2525

2005

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Carrier-based UWB impulse radio: simplicity, flexibility, and pulser implementation in 0.18-micron CMOS

2005 IEEE International Conference on Ultra-Wideband, 2005, p.432-437

2005

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Effect of the n+sinker in self-triggering bipolar ESD protection structures

2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002, p.277-283

2002

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Significance of the failure criterion on transmission line pulse testing

Microelectronics and reliability, 2002-06, Vol.42 (6), p.901-907

2002

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Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices

Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme

Cumulated charging mechanisms at gate processing in high-κ first planar NMOS devices

(Invited) Electro-Thermal Characterization of SiGe HBT PA-Cells

Use of a Purged FOUP to Improve H-Terminated Silicon Surface Stability Prior to Epitaxial Growth

Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors

Ex Situ Bubble Generation, Enhancing the Particle Removal Rate for Single Wafer Megasonic Cleaning Processes

A 0.65-to-1.4 nJ/Burst 3-to-10 GHz UWB All-Digital TX in 90 nm CMOS for IEEE 802.15.4a

The Potential of FinFETs for Analog and RF Circuit Applications

A CMOS Ultra-Wideband Receiver for Low Data-Rate Communication

A fast start-up 3GHz-10GHz digitally controlled oscillator for UWB impulse radio in 90nm CMOS

A 0.65-to-1.4nJ/burst 3-to-10GHz UWB Digital TX in 90nm CMOS for IEEE 802.15.4a

Analog-Digital Partitioning for Low-Power UWB Impulse Radios under CMOS Scaling

Analog and RF circuits in 45 nm CMOS and below: planar bulk versus FinFET

Analog-Digital Partitioning for Low-Power UWB Impulse Radios under CMOS Scaling

Analog and RF circuits in 45 nm CMOS and below: planar bulk versus FinFET

Ultra-wide-band transmitter for low-power wireless body area networks: design and evaluation

Carrier-based UWB impulse radio: simplicity, flexibility, and pulser implementation in 0.18-micron CMOS

Effect of the n+sinker in self-triggering bipolar ESD protection structures

Significance of the failure criterion on transmission line pulse testing

Skull Base Cancer Imaging: The Practical Approach to Diagnosis and Treatment Planning

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