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Plasma-induced, nitrogen-doped graphene-based aerogels for high-performance supercapacitors

Light, science & applications, 2016-10, Vol.5 (10), p.e16130-e16130

2016

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Reevaluating the ability of cerebellum in associative motor learning

Scientific reports, 2019-04, Vol.9 (1), p.6029-6029, Article 6029

2019

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Van der Waals Epitaxy: A new way for growth of III-nitrides

Science China. Technological sciences, 2020-03, Vol.63 (3), p.528-530

2020

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Dependence of dark current and photoresponse on polarization charges for AlGaN‐based heterojunction p–i–n photodetectors

Physica status solidi. A, Applications and materials science, 2017-06, Vol.214 (6), p.n/a

2017

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Study on carbonation technology of alkaline uranium mother liquor

IOP conference series. Earth and environmental science, 2019-05, Vol.267 (3), p.32016

2019

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Review of improved spectral response of ultraviolet photodetectors by surface plasmon

Chinese physics B, 2018-12, Vol.27 (12), p.126101

2018

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Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE

Journal of crystal growth, 2009-07, Vol.311 (14), p.3801-3805

2009

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Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE

Journal of crystal growth, 2009-05, Vol.311 (10), p.2899-2902

2009

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Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer

Applied surface science, 2007-10, Vol.253 (24), p.9395-9399

2007

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Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S478-S481

2009

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Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images

Wuli xuebao, 2020-06, Vol.69 (12), p.127302

2020

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Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer

Physica status solidi. C, 2008-05, Vol.5 (6), p.1818-1821

2008

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Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film

Japanese Journal of Applied Physics, 2007-06, Vol.46 (6L), p.L552

2007

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Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

Physica status solidi. C, 2007-06, Vol.4 (7), p.2494-2497

2007

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Enhancement of blue emission from Mg-doped GaN activated at low temperature in O2/N2 mixture

Physica status solidi. C, 2006-09, Vol.3 (8), p.2750-2753

2006

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Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells

Journal of crystal growth, 2007, Vol.298, p.500-503

2007

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Influence of growth conditions on al incorporation to AlxGa1-xN (x>0.4) grown by MOVPE

Journal of crystal growth, 2007, Vol.298, p.372-374

2007

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Effect of Initial Growth Conditions on The Strain in a-plane GaN

Faguang xuebao, 2012-06, Vol.33 (6), p.581-585

2012

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Effect of Trimethyl-aluminum Preflow on The Structure and Strain Properties of AlN Films

Faguang xuebao, 2012, Vol.33 (1), p.82-87

2012

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Enhanced emission efficiency of InGaN films with Si doping

Physica status solidi. C, 2006-06, Vol.3 (6), p.1944-1948

2006

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Effect of AlN Interlayer on aplane AlGaN Grown by MOCVD

Faguang xuebao, 2012-05, Vol.33 (5), p.519-524

2012

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Effect of GaN Buffer Layers on Deposition of AlN Films by DC Reactive Magnetron Sputtering

Faguang xuebao, 2012-10, Vol.33 (10), p.1089-1094

2012

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Study of AlN Films Doped by Si Thermal Diffusion

Faguang xuebao, 2012-07, Vol.33 (7), p.768-773

2012

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Deposition of AlN Films on Nitrided Sapphire Substrates by Reactive DC Magnetron Sputtering

Faguang xuebao, 2012-02, Vol.33 (2), p.227-232

2012

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Electrical and Optoelectronics Characteristics of GaN Based MIS Photo-detectors

Faguang xuebao, 2012, Vol.33 (1), p.55-61

2012

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Plasma-induced, nitrogen-doped graphene-based aerogels for high-performance supercapacitors

Reevaluating the ability of cerebellum in associative motor learning

Van der Waals Epitaxy: A new way for growth of III-nitrides

Dependence of dark current and photoresponse on polarization charges for AlGaN‐based heterojunction p–i–n photodetectors

Study on carbonation technology of alkaline uranium mother liquor

Review of improved spectral response of ultraviolet photodetectors by surface plasmon

Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE

Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE

Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer

Effects of initial conditions and growth temperature on the properties of nonpolar a -plane AlN grown by LP-HVPE

Characterization of phase separation on AlGaN surfaces by in-situ photoluminescence spectroscopy and high spatially resolved surface potential images

Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer

Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film

Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

Enhancement of blue emission from Mg-doped GaN activated at low temperature in O2/N2 mixture

Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells

Influence of growth conditions on al incorporation to AlxGa1-xN (x>0.4) grown by MOVPE

Effect of Initial Growth Conditions on The Strain in a-plane GaN

Effect of Trimethyl-aluminum Preflow on The Structure and Strain Properties of AlN Films

Enhanced emission efficiency of InGaN films with Si doping

Effect of AlN Interlayer on aplane AlGaN Grown by MOCVD

Effect of GaN Buffer Layers on Deposition of AlN Films by DC Reactive Magnetron Sputtering

Study of AlN Films Doped by Si Thermal Diffusion

Deposition of AlN Films on Nitrided Sapphire Substrates by Reactive DC Magnetron Sputtering

Electrical and Optoelectronics Characteristics of GaN Based MIS Photo-detectors

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