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Data on near infrared polarization spectroscopy measurements to evaluate the potential of the Mueller matrix elements in characterization of turbid liquid samples

Data in brief, 2019-04, Vol.23, p.103756-103756, Article 103756

2019

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Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 μm

Electronics letters, 2009-02, Vol.45 (5), p.265-267

2009

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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1912-1916

2009

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GaSb-based monolithic EP-VCSEL emitting above 2.5 μm

Electronics letters, 2008-11, Vol.44 (23), p.1357-1359

2008

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Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 μm

Electronics letters, 2008-01, Vol.44 (3), p.203-205

2008

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Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1014-1021

2008

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IEEE_Xplore

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 μm

Semiconductor science and technology, 2007-10, Vol.22 (10), p.1140-1144

2007

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Room-Temperature Continuous-Wave Operation of 2.3-$\mu$m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

IEEE photonics technology letters, 2008-10, Vol.20 (20), p.1745-1747

2008

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Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm

Electronics letters, 2009-02, Vol.45 (5), p.1

2009

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Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 mu m

Electronics letters, 2009-02, Vol.45 (5), p.1-1

2009

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Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 [micro sign]m

Electronics letters, 2009, Vol.45 (5), p.265

2009

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Room-Temperature Continuous-Wave Operation of 2.3- \mum Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

IEEE photonics technology letters, 2008-10, Vol.20 (20), p.1745-1747

2008

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IEEE_Xplore

Room-Temperature Continuous-Wave Operation of 2.3-[Formula Omitted]m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

IEEE photonics technology letters, 2008-10, Vol.20 (20), p.1745-1747

2008

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GaSb-based monolithic EP-VCSEL emitting above 2.5 µm

Electronics letters, 2008-11, Vol.44 (23), p.1

2008

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GaSb-based monolithic EP-VCSEL emitting above 2.5 mu m

Electronics letters, 2008-11, Vol.44 (23), p.1-1

2008

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Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 [mu]m and Including a Tunnel Junction

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1014

2008

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Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 µm

Electronics letters, 2008-01, Vol.44 (3), p.1

2008

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Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3mum

Electronics letters, 2008-01, Vol.44 (3), p.203-205

2008

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GaSb-based monolithic EP-VCSEL emitting above 2.5 [micro sign]m

Electronics letters, 2008, Vol.44 (23), p.1357, Article 1357

2008

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Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 [micro sign]m

Electronics letters, 2008, Vol.44 (3), p.203

2008

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Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 mu m

Electronics letters, 2008-01, Vol.44 (3), p.1-1

2008

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AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm

Semiconductor science and technology, 2007-10, Vol.22 (10), p.1140-1144

2007

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AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3µm

Semiconductor science and technology, 2007, Vol.22 (10), p.1140-1144

2007

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GaSb-based microcavity EP-VCSEL emitting above 2.2 μm in CW regime at RT

2008 IEEE 21st International Semiconductor Laser Conference, 2008, p.41-42

2008

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IEEE_Xplore

Monolithic, Sb-based electrically pumped VCSELs emitting at 2.3μm

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-3

2008

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IEEE_Xplore

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Data on near infrared polarization spectroscopy measurements to evaluate the potential of the Mueller matrix elements in characterization of turbid liquid samples

Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 μm

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE

GaSb-based monolithic EP-VCSEL emitting above 2.5 μm

Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 μm

Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 μm

Room-Temperature Continuous-Wave Operation of 2.3-$\mu$m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm

Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 mu m

Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 [micro sign]m

Room-Temperature Continuous-Wave Operation of 2.3- \mum Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

Room-Temperature Continuous-Wave Operation of 2.3-[Formula Omitted]m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

GaSb-based monolithic EP-VCSEL emitting above 2.5 µm

GaSb-based monolithic EP-VCSEL emitting above 2.5 mu m

Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 [mu]m and Including a Tunnel Junction

Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 µm

Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3mum

GaSb-based monolithic EP-VCSEL emitting above 2.5 [micro sign]m

Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 [micro sign]m

Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 mu m

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 µm

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3µm

GaSb-based microcavity EP-VCSEL emitting above 2.2 μm in CW regime at RT

Monolithic, Sb-based electrically pumped VCSELs emitting at 2.3μm

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