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Yellow-red emission from (Ga,In)N heterostructures

Journal of physics. D, Applied physics, 2015-10, Vol.48 (40), p.403001-403024

2015

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Full InGaN red light emitting diodes

Journal of applied physics, 2020-10, Vol.128 (13)

2020

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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Nano letters, 2016-03, Vol.16 (3), p.1863-1868

2016

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Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

Journal of applied physics, 2015-07, Vol.118 (2)

2015

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Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Journal of applied physics, 2019-12, Vol.126 (22)

2019

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Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Nanotechnology, 2023-03, Vol.34 (24), p.245602

2023

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Lasing up to 380 K in a sublimated GaN nanowire

Applied physics letters, 2020-06, Vol.116 (22)

2020

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InGaN islands and thin films grown on epitaxial graphene

Nanotechnology, 2020-10, Vol.31 (40), p.405601-405601

2020

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Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Journal of applied physics, 2019-11, Vol.126 (20)

2019

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Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (12), Article 125437

2013

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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Journal of applied physics, 2024-03, Vol.135 (9)

2024

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On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions

Optics express, 2023-09, Vol.31 (19), p.31397-31409

2023

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Bandwidth-unlimited polarization-maintaining metasurfaces

Science advances, 2021-01, Vol.7 (5)

2021

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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal of applied physics, 2022-07, Vol.132 (3)

2022

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III-nitride on silicon electrically injected microrings for nanophotonic circuits

Optics express, 2019-04, Vol.27 (8), p.11800-11808

2019

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III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Applied physics letters, 2016-12, Vol.109 (23)

2016

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Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Journal of applied physics, 2021-07, Vol.130 (2)

2021

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Whispering-gallery mode InGaN microdisks on GaN substrates

Optics express, 2021-07, Vol.29 (14), p.21280-21289

2021

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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Journal of applied physics, 2020-08, Vol.128 (8)

2020

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Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

Journal of crystal growth, 2013-01, Vol.363, p.282-286

2013

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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Nanotechnology, 2020-11, Vol.31 (46), p.465706-465706

2020

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(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

AIP advances, 2019-05, Vol.9 (5), p.055101-055101-5

2019

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Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Journal of applied physics, 2017-08, Vol.122 (8)

2017

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Yellow-red emission from (Ga,In)N heterostructures

Full InGaN red light emitting diodes

Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Lasing up to 380 K in a sublimated GaN nanowire

InGaN islands and thin films grown on epitaxial graphene

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Excitons in nitride heterostructures: From zero- to one-dimensional behavior

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions

Bandwidth-unlimited polarization-maintaining metasurfaces

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

III-nitride on silicon electrically injected microrings for nanophotonic circuits

III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Whispering-gallery mode InGaN microdisks on GaN substrates

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

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