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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

Applied physics letters, 2009-06, Vol.94 (24), p.243505-243505-3

2009

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On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

IEEE microwave and wireless components letters, 2018-09, Vol.28 (9), p.831-833

2018

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Kinetic expression analysis of the cluster mdv1-mir-M9―M4, genes meq and vIL-8 differs between the lytic and latent phases of Marek's disease virus infection

Journal of general virology, 2012-07, Vol.93 (Pt 7), p.1519-1529

2012

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Integrated MEMS RF Probe for SEM Station-Pad Size and Parasitic Capacitance Reduction

IEEE microwave and wireless components letters, 2015-10, Vol.25 (10), p.693-695

2015

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Gigahertz frequency flexible carbon nanotube transistors

Applied physics letters, 2007-10, Vol.91 (15), p.153111-153111-3

2007

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Gigahertz characterization of a single carbon nanotube

Applied physics letters, 2010-01, Vol.96 (4), p.042109-042109-3

2010

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Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

IEEE transactions on microwave theory and techniques, 2008-12, Vol.56 (12), p.2685-2691

2008

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ICP27 protein of Marek's disease virus interacts with SR proteins and inhibits the splicing of cellular telomerase chTERT and viral vIL8 transcripts

Journal of general virology, 2011-06, Vol.92 (Pt 6), p.1273-1278

2011

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RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor

International journal of numerical modelling, 2014-09, Vol.27 (5-6), p.736-747

2014

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Graphene nanotransistors for RF charge detection

Journal of physics. D, Applied physics, 2014-03, Vol.47 (9), p.94004

2014

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Optimization of RF Performance of Metallic Source/Drain SOI MOSFETs Using Dopant Segregation at the Schottky Interface

IEEE electron device letters, 2009-11, Vol.30 (11), p.1197-1199

2009

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Anisotropic transport properties in InAs/AlSb heterostructures

Applied physics letters, 2010-12, Vol.97 (24), p.243510-243510-3

2010

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Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1594-1596

2011

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What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?

IEEE electron device letters, 2003-03, Vol.24 (3), p.189-191

2003

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High-Frequency Noise Performance of 60-nm Gate-Length FinFETs

IEEE transactions on electron devices, 2008-10, Vol.55 (10), p.2718-2727

2008

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Operation of Near-Field Scanning Millimeter-wave Microscopy up to 67 GHz under Scanning Electron Microscopy Vision

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.95-98

2020

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Analog/RF Performance of Multichannel SOI MOSFET

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1473-1482

2009

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An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

IEEE electron device letters, 2006-08, Vol.27 (8), p.681-683

2006

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Improved Characterization Methology for MOSFETs up to 220 GHz

IEEE transactions on microwave theory and techniques, 2009-05, Vol.57 (5), p.1237-1243

2009

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Gate-Recess Technology for InAs/AlSb HEMTs

IEEE transactions on electron devices, 2009, Vol.56 (9), p.1904-1911

2009

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RF Small-Signal Analysis of Schottky-Barrier p-MOSFET

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1192-1202

2008

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MOSFETs RF Noise Optimization via Channel Engineering

IEEE electron device letters, 2008-01, Vol.29 (1), p.118-121

2008

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Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz

IEEE transactions on microwave theory and techniques, 2005-01, Vol.53 (1), p.301-305

2005

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Wide- and narrow-band bandpass coplanar filters in the W-frequency band

IEEE transactions on microwave theory and techniques, 2003-03, Vol.51 (3), p.784-791

2003

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Efficient De-Embedding Technique for 110-GHz Deep-Channel-MOSFET Characterization

IEEE microwave and wireless components letters, 2007-04, Vol.17 (4), p.301-303

2007

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80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

Kinetic expression analysis of the cluster mdv1-mir-M9―M4, genes meq and vIL-8 differs between the lytic and latent phases of Marek's disease virus infection

Integrated MEMS RF Probe for SEM Station-Pad Size and Parasitic Capacitance Reduction

Gigahertz frequency flexible carbon nanotube transistors

Gigahertz characterization of a single carbon nanotube

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

ICP27 protein of Marek's disease virus interacts with SR proteins and inhibits the splicing of cellular telomerase chTERT and viral vIL8 transcripts

RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor

Graphene nanotransistors for RF charge detection

Optimization of RF Performance of Metallic Source/Drain SOI MOSFETs Using Dopant Segregation at the Schottky Interface

Anisotropic transport properties in InAs/AlSb heterostructures

Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?

High-Frequency Noise Performance of 60-nm Gate-Length FinFETs

Operation of Near-Field Scanning Millimeter-wave Microscopy up to 67 GHz under Scanning Electron Microscopy Vision

Analog/RF Performance of Multichannel SOI MOSFET

An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

Improved Characterization Methology for MOSFETs up to 220 GHz

Gate-Recess Technology for InAs/AlSb HEMTs

RF Small-Signal Analysis of Schottky-Barrier p-MOSFET

MOSFETs RF Noise Optimization via Channel Engineering

Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz

Wide- and narrow-band bandpass coplanar filters in the W-frequency band

Efficient De-Embedding Technique for 110-GHz Deep-Channel-MOSFET Characterization

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