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Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

Nanotechnology, 2016-09, Vol.27 (38), p.385202-385202

2016

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The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Dopant radial inhomogeneity in Mg-doped GaN nanowires

Nanotechnology, 2018-06, Vol.29 (25), p.255706-255706

2018

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Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

Journal of crystal growth, 2011-11, Vol.334 (1), p.177-180

2011

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Facile and Low-Cost Fabrication of SiO2-Covered Au Nanoislands for Combined Plasmonic Enhanced Fluorescence Microscopy and SERS

Nanomaterials (Basel, Switzerland), 2023-10, Vol.13 (19), p.2729

2023

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Layered-Expanded Mesostructured Silicas: Generalized Synthesis and Functionalization

Nanomaterials (Basel, Switzerland), 2018-10, Vol.8 (10), p.817

2018

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Splitting of the Surface Phonon Modes in Wurtzite Nanowires

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL01-08JL01-4

2013

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Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires

Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.727-738

Cros, Ana

2013

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Mg and In Codoped p‑type AlN Nanowires for pn Junction Realization

Nano letters, 2019-12, Vol.19 (12), p.8357-8364

2019

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Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

Nano letters, 2016-05, Vol.16 (5), p.3221-3229

2016

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Si Donor Incorporation in GaN Nanowires

Nano letters, 2015-10, Vol.15 (10), p.6794-6801

2015

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Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

Nanotechnology, 2019-09, Vol.30 (37), p.375602-375602

2019

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Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

Applied physics letters, 2021-12, Vol.119 (26)

2021

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Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

Nanotechnology, 2023-07, Vol.34 (27), p.275603

2023

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Cover Image, Volume 138, Issue 27

Journal of applied polymer science, 2021-07, Vol.138 (27)

2021

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Effect of chain extender on the morphology, thermal, viscoelastic, and dielectric behavior of soybean polyurethane

Journal of applied polymer science, 2021-07, Vol.138 (27), p.n/a

2021

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Preface

Materials science in semiconductor processing, 2016-11, Vol.55, p.1

2016

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The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Nanotechnology, 2021-02, Vol.32 (8), p.085606-085606

2021

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Unraveling the strain state of GaN down to single nanowires

Journal of applied physics, 2016-12, Vol.120 (22)

2016

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Effect of chain extenders on the hydrolytic degradation of soybean polyurethane

Journal of applied polymer science, 2022-07, Vol.139 (28), p.n/a

2022

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Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation

Nanotechnology, 2017-04, Vol.28 (17), p.175701-175701

2017

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Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Applied physics letters, 2019-04, Vol.114 (17)

2019

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Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

Nanotechnology, 2021-01, Vol.32 (2), p.025601-025601

2021

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Boosting Photoluminescence in MAPbBr 3 Single Crystals through Laser-Based Surface Modification

ACS photonics, 2023-12, Vol.10 (12), p.4151-4159

2023

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Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

Electronics (Basel), 2020-11, Vol.9 (11), p.1904

2020

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Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

Dopant radial inhomogeneity in Mg-doped GaN nanowires

Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

Facile and Low-Cost Fabrication of SiO2-Covered Au Nanoislands for Combined Plasmonic Enhanced Fluorescence Microscopy and SERS

Layered-Expanded Mesostructured Silicas: Generalized Synthesis and Functionalization

Splitting of the Surface Phonon Modes in Wurtzite Nanowires

Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires

Mg and In Codoped p‑type AlN Nanowires for pn Junction Realization

Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap

Si Donor Incorporation in GaN Nanowires

Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

Ultrathin GaN quantum wells in AlN nanowires for UV-C emission

Cover Image, Volume 138, Issue 27

Effect of chain extender on the morphology, thermal, viscoelastic, and dielectric behavior of soybean polyurethane

Preface

The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

Unraveling the strain state of GaN down to single nanowires

Effect of chain extenders on the hydrolytic degradation of soybean polyurethane

Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation

Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy

Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy

Boosting Photoluminescence in MAPbBr 3 Single Crystals through Laser-Based Surface Modification

Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies

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