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On the Potential of SiGe HBTs for Extreme Environment Electronics

Proceedings of the IEEE, 2005, Vol.93 (9), p.1559-1582

Cressler, J.D.

2005

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IEEE_Xplore

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

IEEE transactions on microwave theory and techniques, 1998-05, Vol.46 (5), p.572-589

Cressler, J.D.

1998

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IEEE_Xplore

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

IEEE transactions on microwave theory and techniques, 2005-01, Vol.53 (1), p.81-93

2005

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IEEE_Xplore

Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology

IEEE transactions on microwave theory and techniques, 2006-03, Vol.54 (3), p.1262-1268

2006

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IEEE_Xplore

The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation

IEEE transactions on microwave theory and techniques, 2006-04, Vol.54 (4), p.1687-1697

2006

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IEEE_Xplore

A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules

IEEE journal of solid-state circuits, 2008-09, Vol.43 (9), p.1889-1896

2008

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IEEE_Xplore

Half-terahertz operation of SiGe HBTs

IEEE electron device letters, 2006-07, Vol.27 (7), p.567-569

2006

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IEEE_Xplore

Sources of Phase Error and Design Considerations for Silicon-Based Monolithic High-Pass/Low-Pass Microwave Phase Shifters

IEEE transactions on microwave theory and techniques, 2006-12, Vol.54 (12), p.4032-4040

2006

Link zum Volltext
IEEE_Xplore

Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1529-1532

2009

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IEEE_Xplore

On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1007-1019

2009

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IEEE_Xplore

Sub-1-K Operation of SiGe Transistors and Circuits

IEEE electron device letters, 2009-05, Vol.30 (5), p.508-510

2009

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IEEE_Xplore

Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event Upset

IEEE electron device letters, 2009-05, Vol.30 (5), p.511-513

2009

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IEEE_Xplore

A 12-Bit Cryogenic and Radiation-Tolerant Digital-to-Analog Converter for Aerospace Extreme Environment Applications

IEEE transactions on industrial electronics (1982), 2008-07, Vol.55 (7), p.2810-2819

2008

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IEEE_Xplore

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

IEEE transactions on microwave theory and techniques, 2003-11, Vol.51 (11), p.2165-2174

2003

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IEEE_Xplore

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2169-2177

2009

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IEEE_Xplore

A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

IEEE transactions on electron devices, 2002-12, Vol.49 (12), p.2151-2156

2002

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IEEE_Xplore

On Common-Base Avalanche Instabilities in SiGe HBTs

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1276-1285

2008

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IEEE_Xplore

An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2044-2052

2007

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IEEE_Xplore

2005 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Guest Editor

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2093-2093

Cressler, J.D.

2005

Link zum Volltext
IEEE_Xplore

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2568-2574

2001

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IEEE_Xplore

3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3360-3366

2008

Link zum Volltext
IEEE_Xplore

A 28-GHz SiGe up-conversion mixer using a series-connected triplet for higher dynamic range and improved IF port return loss

IEEE journal of solid-state circuits, 2006-03, Vol.41 (3), p.560-565

2006

Link zum Volltext
IEEE_Xplore

RF linearity characteristics of SiGe HBTs

IEEE transactions on microwave theory and techniques, 2001-09, Vol.49 (9), p.1558-1565

2001

Link zum Volltext
IEEE_Xplore

The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits

IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1605-1616

2007

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IEEE_Xplore

The revolution in SiGe: impact on device electronics

Applied surface science, 2004-03, Vol.224 (1), p.9-17

2004

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On the Potential of SiGe HBTs for Extreme Environment Electronics

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology

The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation

A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules

Half-terahertz operation of SiGe HBTs

Sources of Phase Error and Design Considerations for Silicon-Based Monolithic High-Pass/Low-Pass Microwave Phase Shifters

Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers

On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds

Sub-1-K Operation of SiGe Transistors and Circuits

Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event Upset

A 12-Bit Cryogenic and Radiation-Tolerant Digital-to-Analog Converter for Aerospace Extreme Environment Applications

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors

On Common-Base Avalanche Instabilities in SiGe HBTs

An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs

2005 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Guest Editor

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines

A 28-GHz SiGe up-conversion mixer using a series-connected triplet for higher dynamic range and improved IF port return loss

RF linearity characteristics of SiGe HBTs

The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits

The revolution in SiGe: impact on device electronics

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