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Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1757-1766

2012

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IEEE_Xplore

Increasing the signal-to-noise ratio of magnetic tunnel junctions by cryogenic preamplification

Journal of applied physics, 2019-04, Vol.125 (16)

2019

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The revolution in SiGe: impact on device electronics

Applied surface science, 2004-03, Vol.224 (1), p.9-17

2004

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5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

IET microwaves, antennas & propagation, 2008-02, Vol.2 (1), p.19-22

2008

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Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.1931-1937

2007

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IEEE_Xplore

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

IEEE transactions on electron devices, 2001-11, Vol.48 (11), p.2568-2574

2001

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IEEE_Xplore

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

IEEE transactions on microwave theory and techniques, 1998-05, Vol.46 (5), p.572-589

Cressler, J.D.

1998

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IEEE_Xplore

Investigation of single-event transients in voltage-controlled oscillators

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.2081-2087

2003

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IEEE_Xplore

Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology

IEEE transactions on microwave theory and techniques, 2006-03, Vol.54 (3), p.1262-1268

2006

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IEEE_Xplore

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

IEEE transactions on microwave theory and techniques, 2005-01, Vol.53 (1), p.81-93

2005

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IEEE_Xplore

Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Physical review applied, 2017-08, Vol.8 (2), Article 024015

2017

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Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3889-3893

2006

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IEEE_Xplore

Multiple-Bit Upset in 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3259-3264

2006

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IEEE_Xplore

The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation

IEEE transactions on microwave theory and techniques, 2006-04, Vol.54 (4), p.1687-1697

2006

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IEEE_Xplore

On the Potential of SiGe HBTs for Extreme Environment Electronics

Proceedings of the IEEE, 2005, Vol.93 (9), p.1559-1582

Cressler, J.D.

2005

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IEEE_Xplore

Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3469-3476

2009

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IEEE_Xplore

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3078-3084

2009

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IEEE_Xplore

Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-06, Vol.268 (11), p.2092-2098

2010

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A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3393-3401

2009

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IEEE_Xplore

5 MeV Proton irradiation effects on 200 GHz silicon-germanium heterojunction bipolar transistors

Radiation effects and defects in solids, 2017-12, Vol.172 (11-12), p.922-930

2017

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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3166-3174

2006

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IEEE_Xplore

Optimization of SiGe bandgap-based circuits for up to 300°C operation

Solid-state electronics, 2011-02, Vol.56 (1), p.47-55

2011

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Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3298-3305

2006

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IEEE_Xplore

RF linearity characteristics of SiGe HBTs

IEEE transactions on microwave theory and techniques, 2001-09, Vol.49 (9), p.1558-1565

2001

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IEEE_Xplore

Low-power and low-voltage X-band silicon-germanium heterojunction bipolar transistor low-noise amplifier

IET microwaves, antennas & propagation, 2012-09, Vol.6 (12), p.1325-1331

2012

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Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments

Increasing the signal-to-noise ratio of magnetic tunnel junctions by cryogenic preamplification

The revolution in SiGe: impact on device electronics

5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications

Investigation of single-event transients in voltage-controlled oscillators

Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures

Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure

Multiple-Bit Upset in 130 nm CMOS Technology

The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation

On the Potential of SiGe HBTs for Extreme Environment Electronics

Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs)

A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT

5 MeV Proton irradiation effects on 200 GHz silicon-germanium heterojunction bipolar transistors

An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

Optimization of SiGe bandgap-based circuits for up to 300°C operation

Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

RF linearity characteristics of SiGe HBTs

Low-power and low-voltage X-band silicon-germanium heterojunction bipolar transistor low-noise amplifier

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