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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Journal of applied physics, 2015-04, Vol.117 (13)

2015

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Toward Smart and Ultra‐efficient Solid‐State Lighting

Advanced optical materials, 2014-09, Vol.2 (9), p.809-836

2014

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Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Optics express, 2011-12, Vol.19 (25), p.25528-25534

2011

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Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective

Proceedings of the IEEE, 2010-07, Vol.98 (7), p.1162-1179

2010

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Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

Nano letters, 2006-07, Vol.6 (7), p.1396-1400

2006

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Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Journal of applied physics, 2015-05, Vol.117 (18)

2015

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Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

Journal of applied physics, 2016-03, Vol.119 (10)

2016

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Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage

IEEE journal of the Electron Devices Society, 2021-01, Vol.9, p.318-323

2021

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Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Applied physics letters, 2012-12, Vol.101 (24)

2012

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Defect-enabled electrical current leakage in ultraviolet light-emitting diodes

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.723-726

2015

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First principles study of hBN-AlN short-period superlattice heterostructures

Applied physics letters, 2019-01, Vol.114 (1)

2019

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Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Applied physics letters, 2010-09, Vol.97 (13), p.133507-133507-3

2010

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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

Applied physics letters, 2009-02, Vol.94 (8), p.081113-081113-3

2009

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All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

Journal of physics. D, Applied physics, 2021-04, Vol.54 (15), p.155103

2021

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Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Applied physics letters, 2007-12, Vol.91 (23)

2007

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Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes

Microscopy and microanalysis, 2022-08, Vol.28 (S1), p.2010-2011

2022

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Ultrafast and band-selective Auger recombination in InGaN quantum wells

Applied physics letters, 2016-04, Vol.108 (14)

2016

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On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Applied physics letters, 2011-01, Vol.98 (3), p.033506-033506-3

2011

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Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

Journal of applied physics, 2015-03, Vol.117 (9)

2015

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Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Applied physics letters, 2010-03, Vol.96 (12), p.121110-121110-3

2010

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LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

IEEE journal of selected topics in quantum electronics, 2009-07, Vol.15 (4), p.1028-1040

Crawford, M.H.

2009

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Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Journal of physical chemistry. C, 2014-06, Vol.118 (25), p.13330-13345

2014

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Defect-enabled electrical current leakage in ultraviolet light-emitting diodes (Phys. Status Solidi A 4∕2015)

Physica status solidi. A, Applications and materials science, 2015-04, Vol.212 (4), p.np-n/a

2015

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Junction Temperature in Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2005-10, Vol.44 (10R), p.7260

2005

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Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1931-1937

2022

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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

Toward Smart and Ultra‐efficient Solid‐State Lighting

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective

Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Defect-enabled electrical current leakage in ultraviolet light-emitting diodes

First principles study of hBN-AlN short-period superlattice heterostructures

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Correlative Electron Energy-Loss Spectroscopy Bandgap Mapping and DFT Modeling in AlGaN Diodes

Ultrafast and band-selective Auger recombination in InGaN quantum wells

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

Defect-enabled electrical current leakage in ultraviolet light-emitting diodes (Phys. Status Solidi A 4∕2015)

Junction Temperature in Ultraviolet Light-Emitting Diodes

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

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