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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.2982-2996

2013

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Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

Journal of materials research, 2017-05, Vol.32 (9), p.1611-1617

2017

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A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

IEEE journal of microwaves, 2023-10, Vol.3 (4), p.1134-1146

2023

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W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz

2023 Device Research Conference (DRC), 2023, p.1-2

2023

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Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs

IEEE electron device letters, 2017-01, Vol.38 (1), p.95-98

2017

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High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

IEEE electron device letters, 2013-07, Vol.34 (7), p.846-848

2013

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High-Speed, Enhancement-Mode GaN Power Switch With Regrown n+ GaN Ohmic Contacts and Staircase Field Plates

IEEE electron device letters, 2013, Vol.34 (9), p.1118-1120

2013

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Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f/f} of 454/444 GHz

IEEE electron device letters, 2015-06, Vol.36 (6), p.549-551

2015

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1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

IEEE electron device letters, 2011-05, Vol.32 (5), p.632-634

2011

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Selective anisotropic etching of GaN over AlGaN for very thin films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018-05, Vol.36 (3)

2018

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Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic R on E/D-mode GaN HEMTs

IEEE electron device letters, 2017-01, Vol.38 (1), p.95-98

2017

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360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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360 GHz f MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

IEICE transactions on electronics, 2006-07, Vol.E89-C (7), p.906-912

CORRION, A.

2006

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High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.573-575

2020

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Novel High-speed Linear GaN Technology with High Efficiency

2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, p.1130-1132

2019

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Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

IEEE electron device letters, 2007-11, Vol.28 (11), p.945-947

2007

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High-Speed, Enhancement-Mode GaN Power Switch With Regrown + GaN Ohmic Contacts and Staircase Field Plates

IEEE electron device letters, 2013-09, Vol.34 (9), p.1118-1120

2013

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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.2982-2996

2013

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Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023, p.141-144

2023

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Ammonia molecular beam epitaxy of (aluminum,gallium) nitride for aluminum gallium nitride/gallium nitride high electron mobility transistors

Corrion, Andrea

2008

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Power performance of AlGaN/GaN HENTs grown on sic by Ammonia-MBE at 4 and 10 GHz

IEEE electron device letters, 2007, Vol.28 (11), p.945-947

2007

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High-speed Linear GaN Technology with a record Efficiency in Ka-band

2019 14th European Microwave Integrated Circuits Conference (EuMIC), 2019, p.57-59

2019

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(Invited) High-Speed and Linear Graded-Channel GaN FETs

Meeting abstracts (Electrochemical Society), 2019-09, Vol.MA2019-02 (25), p.1172-1172

2019

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Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs

2007 65th Annual Device Research Conference, 2007, p.127-128

2007

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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs

High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

High-Speed, Enhancement-Mode GaN Power Switch With Regrown n+ GaN Ohmic Contacts and Staircase Field Plates

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f/f} of 454/444 GHz

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Selective anisotropic etching of GaN over AlGaN for very thin films

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic R on E/D-mode GaN HEMTs

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

360 GHz f MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

Novel High-speed Linear GaN Technology with High Efficiency

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

High-Speed, Enhancement-Mode GaN Power Switch With Regrown + GaN Ohmic Contacts and Staircase Field Plates

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications : GaN ELECTRONIC DEVICES

Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process

Ammonia molecular beam epitaxy of (aluminum,gallium) nitride for aluminum gallium nitride/gallium nitride high electron mobility transistors

Power performance of AlGaN/GaN HENTs grown on sic by Ammonia-MBE at 4 and 10 GHz

High-speed Linear GaN Technology with a record Efficiency in Ka-band

(Invited) High-Speed and Linear Graded-Channel GaN FETs

Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs

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