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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

e-Prime, 2023-12, Vol.6, p.100338, Article 100338

2023

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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Materials science forum, 2013-01, Vol.740-742, p.553-556

2013

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On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers

IEEE electron device letters, 2024-08, Vol.45 (8), p.1437-1440

2024

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On the Dynamic R ON , Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers

IEEE electron device letters, 2024-08, Vol.45 (8), p.1437-1440

2024

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Selective wet etching and hydrolysis of polycrystalline AlN films grown by metal organic chemical vapor deposition

Materials science in semiconductor processing, 2022-01, Vol.137, p.106157, Article 106157

2022

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The role of AlGaN/GaN heterostructure properties in barrier height variation of Au-free ohmic contacts

Materials science in semiconductor processing, 2021-07, Vol.129, p.105806, Article 105806

2021

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Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-6

2023

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10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters

Materials science forum, 2014-10, Vol.806, p.121-125

2014

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(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

ECS transactions, 2016-05, Vol.72 (4), p.65-76

2016

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Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue

Materials science forum, 2015-06, Vol.821-823, p.667-672

2015

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Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Materials science forum, 2014-02, Vol.778-780, p.525-528

2014

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A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.150-153

2014

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Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application

Advanced materials research, 2011, Vol.324, p.221-224

2011

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Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Materials science forum, 2011, Vol.679-680, p.500-503

2011

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Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

ECS transactions, 2011, Vol.35 (6), p.157-164

2011

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Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

Materials science forum, 2010-01, Vol.645-648, p.817-820

2010

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New method for non destructive snap-back characterization in multi-finger power MOSFETs

2008 IEEE International Conference on Microelectronic Test Structures, 2008, p.137-141

2008

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Reliability Aspects of 650-V-Rated GaN Power Devices

Power GaN Devices, 2016, p.319-344

2016

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Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

Meeting abstracts (Electrochemical Society), 2011-03, Vol.MA2011-01 (24), p.1483-1483

2011

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(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Meeting abstracts (Electrochemical Society), 2016-04, Vol.MA2016-01 (23), p.1171-1171

2016

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Association of COVID-19 inflammation with activation of the C5a-C5aR1 axis

Nature (London), 2020-12, Vol.588 (7836), p.146-150

2020

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Cobalt and iron species in alumina supported bimetallic catalysts for Fischer–Tropsch reaction

Applied catalysis. A, General, 2014-07, Vol.481, p.116-126

2014

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Construction of a Quality of Life Questionnaire for slowly progressive neuromuscular disease

Quality of life research, 2015-11, Vol.24 (11), p.2615-2623

2015

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Abstract C063: OSE279, a PD-1 blocking monoclonal antibody, as future backbone of a bifunctional checkpoint inhibitor platform: Preclinical characterization and early clinical results of a First-In-Human (FIH) study in subjects with advanced malignancies

Molecular cancer therapeutics, 2023-12, Vol.22 (12_Supplement), p.C063-C063

2023

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Multifunctional Polyelectrolyte Multilayer Films: Combining Mechanical Resistance, Biodegradability, and Bioactivity

Biomacromolecules, 2007-01, Vol.8 (1), p.139-145

2007

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Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers

On the Dynamic R ON , Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers

Selective wet etching and hydrolysis of polycrystalline AlN films grown by metal organic chemical vapor deposition

The role of AlGaN/GaN heterostructure properties in barrier height variation of Au-free ohmic contacts

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs

10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs

Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps

New method for non destructive snap-back characterization in multi-finger power MOSFETs

Reliability Aspects of 650-V-Rated GaN Power Devices

Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Association of COVID-19 inflammation with activation of the C5a-C5aR1 axis

Cobalt and iron species in alumina supported bimetallic catalysts for Fischer–Tropsch reaction

Construction of a Quality of Life Questionnaire for slowly progressive neuromuscular disease

Abstract C063: OSE279, a PD-1 blocking monoclonal antibody, as future backbone of a bifunctional checkpoint inhibitor platform: Preclinical characterization and early clinical results of a First-In-Human (FIH) study in subjects with advanced malignancies

Multifunctional Polyelectrolyte Multilayer Films: Combining Mechanical Resistance, Biodegradability, and Bioactivity

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