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Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Journal of applied physics, 2022-03, Vol.131 (12)

2022

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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Scientific reports, 2020-08, Vol.10 (1), p.14166-14166, Article 14166

2020

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Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

Journal of crystal growth, 2019-02, Vol.507, p.220-225

2019

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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines (Basel), 2019-10, Vol.10 (10), p.690

2019

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Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Journal of crystal growth, 2020-12, Vol.552, p.125911, Article 125911

2020

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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Solid-state electronics, 2022-02, Vol.188, p.108210, Article 108210

2022

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Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1145-1152

2015

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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Journal of crystal growth, 2022-09, Vol.593, p.126779, Article 126779

2022

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Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Semiconductor science and technology, 2021-03, Vol.36 (3), p.34002

2021

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Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Semiconductor science and technology, 2021-02, Vol.36 (2), p.24001

2021

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AlGaN/GaN/AlGaN DH‐HEMTs Grown on a Patterned Silicon Substrate

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a

2018

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Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.917-924

2016

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CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

Crystals (Basel), 2022-11, Vol.12 (11), p.1605

2022

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Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9)

2018

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Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS: Monolithic integration of ammonia-MBE-grown GaN-HEMTs with Si CMOS

Physica status solidi. A, Applications and materials science, 2016-04, Vol.213 (4), p.917-924

2016

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Case Studies

SiC Technology, 2024, p.185-270

2024

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Molecular Beam Epitaxy of AlGaN/GaN High Electron Mobility Transistor Heterostructures for High Power and High-Frequency Applications

Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing, and Sensing, 2019, p.201-223

1, 2019

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Case Studies

GaN Technology, 2024, p.185-291

2024

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Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Cathodoluminescence and electrical study of vertical GaN-on-GaN Schottky diodes with dislocation clusters

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS

Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Metalorganic Chemical Vapor Phase Epitaxy Growth of Buffer Layers on 3C‐SiC/Si(111) Templates for AlGaN/GaN High Electron Mobility Transistors with Low RF Losses

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

AlGaN/GaN/AlGaN DH‐HEMTs Grown on a Patterned Silicon Substrate

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS: Monolithic integration of ammonia-MBE-grown GaN-HEMTs with Si CMOS

Case Studies

Molecular Beam Epitaxy of AlGaN/GaN High Electron Mobility Transistor Heterostructures for High Power and High-Frequency Applications

Case Studies

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