UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

Applied physics letters, 2022-08, Vol.121 (5)

2022

Volltextzugriff (PDF)

GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition

Applied physics letters, 2024-08, Vol.125 (8)

2024

Volltextzugriff (PDF)

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

Semiconductor science and technology, 2022-07, Vol.37 (7), p.75003

2022

Volltextzugriff (PDF)

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Applied physics letters, 2016-05, Vol.108 (20)

2016

Volltextzugriff (PDF)

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Journal of crystal growth, 2012-08, Vol.352 (1), p.203-208

2012

Volltextzugriff (PDF)

Growth and Characterization of InxGa1−xAs/GaAs1−yPy Strained-Layer Superlattices with High Values of y (~80%)

Journal of electronic materials, 2013-05, Vol.42 (5), p.912-917

2013

Volltextzugriff (PDF)

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

Physica status solidi. A, Applications and materials science, 2011-12, Vol.208 (12), p.2884-2888

2011

Volltextzugriff (PDF)

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Journal of crystal growth, 2004-01, Vol.261 (2), p.341-348

2004

Volltextzugriff (PDF)

Chest compressions are not more effective when delivered from a rescuer's preferred side

Resuscitation, 2010-12, Vol.81 (2), p.S49-S49

2010

Volltextzugriff (PDF)

Characteristics of low-temperature-grown GaN films on Si(111)

Solid state communications, 2005-02, Vol.133 (5), p.283-287

2005

Volltextzugriff (PDF)

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Applied physics letters, 2016-05, Vol.108 (20)

2016

Volltextzugriff (PDF)

High performance tunnel junction with resistance to thermal annealing

AIP Conference Proceedings, 2016, Vol.1766 (1)

2016

Volltextzugriff (PDF)

Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-07, Vol.61, p.571-575

1999

Volltextzugriff (PDF)

Growth and Characterization of In x Ga1−x As/GaAs1−y P y Strained-Layer Superlattices with High Values of y (~80%)

Journal of electronic materials, 2013-05, Vol.42 (5), p.912-917

2013

Volltextzugriff (PDF)

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

IEEE journal of photovoltaics, 2013-01, Vol.3 (1), p.278-283

2013

Volltextzugriff (PDF)

Growth and Characterization of In^sub x^Ga^sub 1â 'x^As/GaAs^sub 1â 'y^P^sub y^ Strained-Layer Superlattices with High Values of y (~80%)

Journal of electronic materials, 2013-05, Vol.42 (5), p.912

2013

Volltextzugriff (PDF)

Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition

Journal of materials research, 1999-04, Vol.14 (4), p.1171-1174

1999

Volltextzugriff (PDF)

Next-generation, high-efficiency III-V multijunction solar cells

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.998-1001

2000

Volltextzugriff (PDF)

PROPERTIES OF AMORPHOUS GAN GROWN ON SILICON

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2002-03, Vol.16 (6n07), p.1086-1090

2002

Volltextzugriff (PDF)

Silicon monolayer growth using dichlorosilane and hydrogen in a near atmospheric pressure chemical vapor deposition reactor

Thin solid films, 1993-03, Vol.225 (1), p.183-186

1993

Volltextzugriff (PDF)

Infrared materials for thermophotovoltaic applications

Journal of electronic materials, 1998-09, Vol.27 (9), p.1038-1042

1998

Volltextzugriff (PDF)

Atomic layer epitaxy of device quality AlGaAs and AlAs

Applied surface science, 1994-12, Vol.82 (1-4), p.18-22

1994

Volltextzugriff (PDF)

Metamorphic GaInP/GaInAs/Ge solar cells

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.982-985

2000

Volltextzugriff (PDF)

Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition

Materials science forum, 1998-01, Vol.264-268, p.1239-1242

1998

Volltextzugriff (PDF)

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

Journal of electronic materials, 1997-10, Vol.26 (10), p.1145-1153

1997

Volltextzugriff (PDF)

1 – 25 von 172

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(114)
Mit Volltextzugriff
(128)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(116)
Life Sciences & Biomedicine
(52)
Physical Sciences
(50)
Physics
(44)
Technology
(39)
Physics, Applied
(37)
Materials Science
(33)
Humans
(30)
Exact Sciences And Technology
(29)
Materials Science, Multidisciplinary
(26)
Female
(20)
Photovoltaic Cells
(19)
Male
(18)
Engineering
(16)
Engineering, Electrical & Electronic
(16)
Gallium Arsenide
(15)
Physics, Condensed Matter
(15)
Energy & Fuels
(14)
Middle Aged
(13)
Animals
(12)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD

GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition

Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Growth and Characterization of InxGa1−xAs/GaAs1−yPy Strained-Layer Superlattices with High Values of y (~80%)

Staggered InGaAs/GaAsP strained layer superlattices for use in optical devices

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Chest compressions are not more effective when delivered from a rescuer's preferred side

Characteristics of low-temperature-grown GaN films on Si(111)

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

High performance tunnel junction with resistance to thermal annealing

Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

Growth and Characterization of In x Ga1−x As/GaAs1−y P y Strained-Layer Superlattices with High Values of y (~80%)

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

Growth and Characterization of In^sub x^Ga^sub 1â 'x^As/GaAs^sub 1â 'y^P^sub y^ Strained-Layer Superlattices with High Values of y (~80%)

Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition

Next-generation, high-efficiency III-V multijunction solar cells

PROPERTIES OF AMORPHOUS GAN GROWN ON SILICON

Silicon monolayer growth using dichlorosilane and hydrogen in a near atmospheric pressure chemical vapor deposition reactor

Infrared materials for thermophotovoltaic applications

Atomic layer epitaxy of device quality AlGaAs and AlAs

Metamorphic GaInP/GaInAs/Ge solar cells

Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

Suchergebnisse filtern