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The Daily Patterns of Emergency Medical Events

Journal of biological rhythms, 2024-02, Vol.39 (1), p.79-99

2024

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Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Semiconductor science and technology, 2009-03, Vol.24 (3), p.035008-035008 (5)

2009

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Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied physics letters, 2007-07, Vol.91 (4)

2007

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War and Drugs: The Role of Military Conflict in the Development of Substance Abuse

Bergen-Cico, Dessa K.

1, 2012

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Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

IEEE electron device letters, 2009-10, Vol.30 (10), p.1030-1032

2009

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Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1)

2011

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Solid-state electronics, 2012, Vol.67 (1), p.74-78

2012

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Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

Journal of electronic materials, 2012-11, Vol.41 (11), p.3013-3016

2012

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Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

Applied physics letters, 2007-03, Vol.90 (12)

2007

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Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures

Microelectronics and reliability, 2007-04, Vol.47 (4-5), p.790-793

2007

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AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

Semiconductor science and technology, 2007-08, Vol.22 (8), p.947-951

2007

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Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

Applied physics letters, 2012-04, Vol.100 (14), p.142113-142113-3

2012

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Age of First Use as a Predictor of Current Alcohol and Marijuana Use Among College-Bound Emerging Adults

Journal of child & adolescent substance abuse, 2013-07, Vol.22 (3), p.235-253

2013

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Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide

Physica status solidi. C, 2007-06, Vol.4 (7), p.2720-2723

2007

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Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD

Physica status solidi. C, 2008-05, Vol.5 (6), p.1956-1958

2008

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Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.1065-1072

2006

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Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

IEEE electron device letters, 2013-03, Vol.34 (3), p.432-434

2013

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Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2144-2154

2010

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RF Performance of InAlN/GaN HFETs and MOSHFETs With f \times L up to 21 \hbox\cdot \mu\hbox

IEEE electron device letters, 2010-03, Vol.31 (3), p.180-182

2010

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al sub(2)O sub(3) gate insulation and passivation

Solid-state electronics, 2012-01, Vol.67 (1), p.74-78

2012

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Material and electrical properties of N-polar (GaN)/InN surfaces

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014, p.1-4

2014

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Proposal and Performance Analysis of Normally Off [Formula Omitted] GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2144

2010

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Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014, p.1-4

2014

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Proposal and Performance Analysis of Normally Off n++ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN B arrier

IEEE transactions on electron devices, 2010, Vol.57 (9), p.2144-2154

2010

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Transforming undergraduate education: Theory that compels, practices that succeed

Rowman & Littlefield Publishers, Inc, 2012

Harward, Donald W., Ed

2012

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The Daily Patterns of Emergency Medical Events

Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

War and Drugs: The Role of Military Conflict in the Development of Substance Abuse

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors

Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide

Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition

Age of First Use as a Predictor of Current Alcohol and Marijuana Use Among College-Bound Emerging Adults

Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide

Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

Proposal and Performance Analysis of Normally Off \hbox^ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

RF Performance of InAlN/GaN HFETs and MOSHFETs With f \times L up to 21 \hbox\cdot \mu\hbox

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al sub(2)O sub(3) gate insulation and passivation

Material and electrical properties of N-polar (GaN)/InN surfaces

Proposal and Performance Analysis of Normally Off [Formula Omitted] GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Gate leakage reduction of AlGaN/GaN MOS-HFETs with HfO2 prepared by ALD

Proposal and Performance Analysis of Normally Off n++ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN B arrier

Transforming undergraduate education: Theory that compels, practices that succeed

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