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Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

Advanced science, 2023-03, Vol.10 (9), p.e2205481-n/a

2023

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Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4288-4294

2016

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Formation of stacked Ni silicide nanocrystals for nonvolatile memory application

Applied physics letters, 2007-03, Vol.90 (11)

2007

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Improved memory window for Ge nanocrystals embedded in SiON layer

Applied physics letters, 2006-10, Vol.89 (16), p.162105-162105-3

2006

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Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Thin solid films, 2011-12, Vol.520 (5), p.1608-1611

2011

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Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

Applied physics letters, 2010-11, Vol.97 (19)

2010

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Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2343-2346

2005

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Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction

Applied physics letters, 2008-12, Vol.93 (22), p.222101

2008

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Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory

Applied physics letters, 2009-03, Vol.94 (10), p.102106-102106-3

2009

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Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Applied physics letters, 2007-08, Vol.91 (8), p.082103-082103-3

2007

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Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

Applied physics letters, 2008-04, Vol.92 (15)

2008

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P-15: Bias Stress Reliability for w/ and w/o Oxide-passivated IGZO TFTs

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.1151-1153

2011

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Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Thin solid films, 2015-11, Vol.595, p.176-180

2015

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Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization

Applied physics letters, 2005-10, Vol.87 (14)

2005

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Passivation Effect of Poly-Si Thin-Film Transistors With Fluorine-Ion-Implanted Spacers

IEEE electron device letters, 2008-06, Vol.29 (6), p.603-605

2008

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Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization

Journal of display technology, 2007-03, Vol.3 (1), p.45-51

2007

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Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

Surface & coatings technology, 2007-12, Vol.202 (4), p.1292-1296

2007

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P‐129: Planarization Effect on Electrical Performances of Organic Thin Film Transistors

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1584-1586

2018

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50‐4: Novel Large‐size Process for Organic Thin‐Film Transistor Fabrication

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.664-666

2018

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High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates

IEEE transactions on nanotechnology, 2006-05, Vol.5 (3), p.157-162

2006

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Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

Applied physics letters, 2009-12, Vol.95 (26), p.262110-262110-3

2009

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P-29: A Polymer/Fullerene-based Material in Near-Infrared Photodetector Application

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.1240-1242

2015

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Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

IEEE electron device letters, 2006-04, Vol.27 (4), p.262-264

2006

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Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

Thin solid films, 2011-11, Vol.520 (3), p.1136-1140

2011

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Heterogeneous Integration of Atomically‐Thin Indium Tungsten Oxide Transistors for Low‐Power 3D Monolithic Complementary Inverter

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

Formation of stacked Ni silicide nanocrystals for nonvolatile memory application

Improved memory window for Ge nanocrystals embedded in SiON layer

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction

Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory

Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

P-15: Bias Stress Reliability for w/ and w/o Oxide-passivated IGZO TFTs

Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization

Passivation Effect of Poly-Si Thin-Film Transistors With Fluorine-Ion-Implanted Spacers

Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization

Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

P‐129: Planarization Effect on Electrical Performances of Organic Thin Film Transistors

50‐4: Novel Large‐size Process for Organic Thin‐Film Transistor Fabrication

High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates

Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications

P-29: A Polymer/Fullerene-based Material in Near-Infrared Photodetector Application

Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

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