UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique

Journal of applied physics, 2023-02, Vol.133 (6)

2023

Volltextzugriff (PDF)

Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique

Applied physics letters, 2021-07, Vol.119 (1)

2021

Volltextzugriff (PDF)

Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC

Journal of applied physics, 2018-10, Vol.124 (13)

2018

Volltextzugriff (PDF)

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

Applied physics letters, 2022-12, Vol.121 (24)

2022

Volltextzugriff (PDF)

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Journal of applied physics, 2022-08, Vol.132 (6)

2022

Volltextzugriff (PDF)

Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

Applied physics letters, 2020-11, Vol.117 (19)

2020

Volltextzugriff (PDF)

Theoretical study of strain-induced modulation of the bandgap in SiC

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.71301

2018

Volltextzugriff (PDF)

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SH), p.SH1002

2022

Volltextzugriff (PDF)

Microscopic physical origin of charge traps in 3D NAND flash memories

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1038

2023

Volltextzugriff (PDF)

Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE

Japanese Journal of Applied Physics, 2021-04, Vol.60 (4)

2021

Volltextzugriff (PDF)

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

Volltextzugriff (PDF)

Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CJ04

2017

Volltextzugriff (PDF)

Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide

Applied physics letters, 2012-05, Vol.100 (21), p.212110-212110-3

2012

Volltextzugriff (PDF)

Self-forming and self-decomposing gallium oxide layers at the GaN/Al 2 O 3 interfaces

Applied physics express, 2019-06, Vol.12 (6), p.61008

2019

Volltextzugriff (PDF)

A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain

Materials science forum, 2013-01, Vol.740-742, p.469-472

2013

Volltextzugriff (PDF)

Origins of Negative Fixed Charge in Wet Oxidation for SiC

Materials science forum, 2013-01, Vol.740-742, p.409-412

2013

Volltextzugriff (PDF)

Theoretical Study of N Incorporation Effect during SiC Oxidation

Materials science forum, 2013-01, Vol.740-742, p.455-458

2013

Volltextzugriff (PDF)

First principles study of the effect of hydrogen annealing on SiC MOSFETs

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

Volltextzugriff (PDF)

Oxidation effect for the carbon related defect formation in SiC/SiO2 interface by first principles calculation

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

Volltextzugriff (PDF)

First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

Japanese Journal of Applied Physics, 2021-08, Vol.60 (8), p.85503

2021

Volltextzugriff (PDF)

Investigation of the GaN/Al2O3 Interface by First Principles Calculations

physica status solidi (b), 2018-04, Vol.255 (4), p.n/a

2018

Volltextzugriff (PDF)

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO 2 interfaces

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SH), p.SH1002

2022

Volltextzugriff (PDF)

Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

Physical review. B, 2022-07, Vol.106 (3), Article 035309

2022

Volltextzugriff (PDF)

Investigation of the GaN/Al 2 O 3 Interface by First Principles Calculations

physica status solidi (b), 2018-04, Vol.255 (4)

2018

Volltextzugriff (PDF)

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide ( Al 2 O 3 ) 1 − x ( Si O 2 ) x : First-Principles Exploration of Gate Oxides in Ga N -Based Power Devices

Physical review applied, 2020-07, Vol.14 (1), Article 014034

2020

Volltextzugriff (PDF)

1 – 25 von 39

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(32)
Mit Volltextzugriff
(28)

Publikationsform

Artikel
(35)
Tagungsberichte
(4)

Sprache

Englisch
(39)
Japanisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(21)
Physical Sciences
(19)
Physics
(17)
Physics, Applied
(16)
First Principles
(14)
Mathematical Analysis
(10)
Silicon Dioxide
(10)
Oxidation
(8)
Silicon Carbide
(7)
Applied Physics
(6)
Physics And Astronomy
(6)
Technology
(6)
Density Functional Theory
(5)
Materials Science
(5)
Materials Science, Multidisciplinary
(5)
Molecular Dynamics
(5)
Defects
(4)
Gallium Nitrides
(4)
General Engineering
(4)
General Physics And Astronomy
(4)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

2 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique

Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique

Effects of annealing with CO and CO2 molecules on oxygen vacancy defect density in amorphous SiO2 formed by thermal oxidation of SiC

Improvement of the reliability of potassium-ion electrets thorough an additional oxidation process

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Negative-charge-storing mechanism of potassium-ion SiO2-based electrets for vibration-powered generators

Theoretical study of strain-induced modulation of the bandgap in SiC

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces

Microscopic physical origin of charge traps in 3D NAND flash memories

Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide

Self-forming and self-decomposing gallium oxide layers at the GaN/Al 2 O 3 interfaces

A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain

Origins of Negative Fixed Charge in Wet Oxidation for SiC

Theoretical Study of N Incorporation Effect during SiC Oxidation

First principles study of the effect of hydrogen annealing on SiC MOSFETs

Oxidation effect for the carbon related defect formation in SiC/SiO2 interface by first principles calculation

First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments

Investigation of the GaN/Al2O3 Interface by First Principles Calculations

Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO 2 interfaces

Microscopic identification of stepped SiC(0001) and the reaction site of hydrogen-rich epitaxial growth

Investigation of the GaN/Al 2 O 3 Interface by First Principles Calculations

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide ( Al 2 O 3 ) 1 − x ( Si O 2 ) x : First-Principles Exploration of Gate Oxides in Ga N -Based Power Devices

Suchergebnisse filtern